KTC811E Todos los transistores

 

KTC811E . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: KTC811E
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 0.2 W
   Tensión colector-base (Vcb): 60 V
   Tensión colector-emisor (Vce): 50 V
   Tensión emisor-base (Veb): 5 V
   Corriente del colector DC máxima (Ic): 0.15 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 80 MHz
   Capacitancia de salida (Cc): 2 pF
   Ganancia de corriente contínua (hfe): 120
   Paquete / Cubierta: TES6

 Búsqueda de reemplazo de transistor bipolar KTC811E

 

KTC811E Datasheet (PDF)

 ..1. Size:43K  kec
ktc811e.pdf

KTC811E
KTC811E

SEMICONDUCTOR KTC811ETECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORGENERAL PURPOSE APPLICATION.SWITCHING APPLICATION. BB1FEATURESA super-minimold package houses 2 transistor.1 6 DIM MILLIMETERSExcellent temperature response between these 2 transistor. _A 1.6 + 0.05_A1 1.0 + 0.05High pairing property in hFE. 52_B 1.6 + 0.05_B1 1.2 + 0.05The follwing characteri

 8.1. Size:43K  kec
ktc811u.pdf

KTC811E
KTC811E

SEMICONDUCTOR KTC811UTECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORGENERAL PURPOSE APPLICATION.SWITCHING APPLICATION.BFEATURESB1A super-minimold package houses 2 transistor.DIM MILLIMETERS1 6_Excellent temperature response between these 2 transistor. A 2.00 + 0.20_2 5 A1 1.3 + 0.1High pairing property in hFE._B 2.1 + 0.13 4 D _B1 1.25 + 0.1The follwing char

 8.2. Size:46K  kec
ktc811t.pdf

KTC811E
KTC811E

SEMICONDUCTOR KTC811TTECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORGENERAL PURPOSE APPLICATION.SWITCHING APPLICATION. EK B KFEATURES DIM MILLIMETERSExcellent hFE Linearity _A 2.9 + 0.216B 1.6+0.2/-0.1: hFE(2)=25(Min.) at VCE=6V, IC=400mA._C 0.70 + 0.052 5_+D 0.4 0.1Complementary to KTA711T.E 2.8+0.2/-0.3_F 1.9 + 0.23 4G 0.95_H 0.16 + 0.05I 0

 9.1. Size:47K  kec
ktc814u.pdf

KTC811E
KTC811E

SEMICONDUCTORKTC814UTECHNICAL DATAEPITAXIAL PLANAR NPN TRANSISTORFOR MUTING AND SWITCHING APPLICATION.FEATURES BHigh Emitter-Base Voltage : VEBO=25V(Min.)B1High Reverse hFEDIM MILLIMETERS1 6_: Reverse hFE=150(Typ.) (VCE=-2V, IC=-4mA) A 2.00 + 0.20_2 5 A1 1.3 + 0.1Low on Resistance : RON=1 (Typ.), (IB=5mA)_B 2.1 + 0.13 4 D _B1 1.25 + 0.1C 0.65D 0.2+0.1

 9.2. Size:50K  kec
ktc813u.pdf

KTC811E
KTC811E

SEMICONDUCTOR KTC813UTECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORTV TUNER, UHF OSCILLATOR APPLICATION.(COMMON BASE) TV TUNER, UHF CONVERTER APPLICATION.B(COMMON BASE) B1DIM MILLIMETERS1 6_FEATURES A 2.00 + 0.20_2 5 A1 1.3 + 0.1High Transition Frequency : fT=1500MHz (Typ.)._B 2.1 + 0.13 4 D _B1 1.25 + 0.1Excellent hFE Linearity. C 0.65D 0.2+0.10/-0.05

 9.3. Size:43K  kec
ktc812u.pdf

KTC811E
KTC811E

SEMICONDUCTOR KTC812UTECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORGENERAL PURPOSE APPLICATION.SWITCHING APPLICATION.BFEATURESB1A super-minimold package houses 2 transistor.DIM MILLIMETERS1 6_Excellent temperature response between these 2 transistor. A 2.00 + 0.20_2 5 A1 1.3 + 0.1High pairing property in hFE._B 2.1 + 0.13 4 D _B1 1.25 + 0.1The follwing char

 9.4. Size:49K  kec
ktc812t.pdf

KTC811E
KTC811E

SEMICONDUCTORKTC812TTECHNICAL DATAEPITAXIAL PLANAR NPN TRANSISTORFOR MUTING AND SWITCHING APPLICATION.FEATURES EK B KHigh Emitter-Base Voltage : VEBO=25V(Min.)DIM MILLIMETERSHigh Reverse hFE _A 2.9 + 0.216B 1.6+0.2/-0.1: Reverse hFE=150(Typ.) (VCE=-2V, IC=-4mA)_C 0.70 + 0.052 5_+D 0.4 0.1Low on Resistance : RON=1 (Typ.), (IB=5mA)E 2.8+0.2/-0.3_F 1.9

 9.5. Size:73K  kec
ktc815.pdf

KTC811E
KTC811E

SEMICONDUCTOR KTC815TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORLOW FREQUENCY AMPLIFIERB CFEATURESCollector-Base Voltage : VCBO=60V.Complementary to KTA539.DIM MILLIMETERSN A 4.70 MAXB 4.80 MAXEKG C 3.70 MAXD 0.45DE 1.00F 1.27G 0.85H 0.45MAXIMUM RATING (Ta=25 )_J 14.00 + 0.50HK 0.55 MAXCHARACTERISTIC SYMBOL RATING UNITF F L 2.30M 0.45 MAXV

 9.6. Size:42K  kec
ktc812e.pdf

KTC811E
KTC811E

SEMICONDUCTOR KTC812ETECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORGENERAL PURPOSE APPLICATION.SWITCHING APPLICATION. BB1FEATURESA super-minimold package houses 2 transistor.1 6 DIM MILLIMETERSExcellent temperature response between these 2 transistor. _A 1.6 + 0.05_A1 1.0 + 0.05High pairing property in hFE. 52_B 1.6 + 0.05_B1 1.2 + 0.05The follwing characteri

Otros transistores... 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , 2N3906 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .

 

 
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