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KTD1047B . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: KTD1047B
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 100 W
   Tensión colector-base (Vcb): 160 V
   Tensión colector-emisor (Vce): 140 V
   Tensión emisor-base (Veb): 6 V
   Corriente del colector DC máxima (Ic): 12 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 15 MHz
   Capacitancia de salida (Cc): 210 pF
   Ganancia de corriente contínua (hfe): 60
   Paquete / Cubierta: TO3P(N)-E

 Búsqueda de reemplazo de transistor bipolar KTD1047B

 

KTD1047B Datasheet (PDF)

 ..1. Size:365K  kec
 ktd1047b.pdf

KTD1047B KTD1047B

SEMICONDUCTOR KTD1047BTECHNICAL DATA TRIPLE DIFFUSED NPN TRANSISTORHIGH POWER AMPLIFIER APPLICATION. AFEATURES Q BNO KComplementary to KTB817B.DIM MILLIMETERSRecommended for 60W Audio Frequency _A +15.60 0.20_B4.80 + 0.20Amplifier Output Stage._C 19.90 + 0.20_D 2.00 0.20+_d +1.00 0.20_E +3.00 0.20_F 3.80 + 0.20_G 3.50 + 0.20D _

 7.1. Size:72K  kec
 ktd1047.pdf

KTD1047B KTD1047B

SEMICONDUCTOR KTD1047TECHNICAL DATA TRIPLE DIFFUSED NPN TRANSISTORHIGH POWER AMPLIFIER APPLICATION.A Q BKFEATURES Complementary to KTB817. Recommended for 60W Audio Frequency DIM MILLIMETERSAmplifier Output Stage.A 15.9 MAXB 4.8 MAX_C 20.0 + 0.3_D 2.0 + 0.3Dd 1.0+0.3/-0.25E 2.0F 1.0MAXIMUM RATING (Ta=25 )G 3.3 MAXdH 9.0CHARACTERISTIC SYMBOL RATIN

 9.1. Size:307K  kec
 ktd1028.pdf

KTD1047B KTD1047B

SEMICONDUCTOR KTD1028TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORHIGH CURRENT APPLICATION. FEATURESHigh DC Current Gain: hFE=800 3200 (VCE=5.0V, IC=300mA).Wide Area of Safe Operation. Low Collector Saturation Voltage. : VCE(sat)=0.17V (IC=500mA, IB=5.0mA).MAXIMUM RATING (Ta=25 )CHARACTERISTIC SYMBOL RATING UNITVCBOCollector-Base Voltage 60 VVCEOCollector-Emitter Vo

 9.2. Size:398K  kec
 ktd1003.pdf

KTD1047B KTD1047B

SEMICONDUCTOR KTD1003TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORHIGH CURRENT APPLICATION. A CFEATURESGH High DC Current GainLM: hFE=800 3200. (VCE=5.0V, IC=300mA). Wide Area of Safe Operation.N Low Collector Saturation VoltageD D: VCE(sat)=0.17V (IC=500mA, IB=5.0mA).KDIM MILLIMETERSF FA 4.70 MAX_+B 2.50 0.20C 1.70 MAXD 0.45+0.15/-0.101

Otros transistores... 2SA1801 , 2SA1802 , 2SA1802A , 2SA1803 , 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , BD777 , 2SA1805 , 2SA1805O , 2SA1805R , 2SA1806 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C .

 

 
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