KTD1411 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

SEMICONDUCTOR KTD1411TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORGENERAL PURPOSE DARLINGTON TRANSISTOR.ABDCFEATURESEHigh DC Current Gain : hFE=3000(Min.) F(VCE=2V, IC=1A)GHDIM MILLIMETERSJA 8.3 MAXMAXIMUM RATING (Ta=25 )KB 5.8LC 0.7CHARACTERISTIC SYMBOL RATING UNIT_+D 3.2 0.1E 3.5VCBOCollector-Base Voltage 80 V_+F 11.0 0.3G 2.9

SEMICONDUCTOR KTD1415TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORHIGH POWER SWITCHING APPLICATIONS. HAMMER DRIVER, PULSE MOTOR DRIVER ACAPPLICATIONS.DIM MILLIMETERSS_A 10.0 0.3+_+B 15.0 0.3EFEATURESC _2.70 0.3+D 0.76+0.09/-0.05High DC Current Gain : hFE=2000(Min.) at VCE=3V, IC=3A._E 3.2 0.2+Low Saturation Voltage : VCE(sat)=1.5V(Max.) at IC

SEMICONDUCTOR KTD1413TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORHIGH POWER SWITCHING APPLICATIONS. HAMMER DRIVER, PULSE MOTOR DRIVER ACAPPLICATIONS.DIM MILLIMETERSS_A 10.0 0.3+_+B 15.0 0.3EFEATURESC _2.70 0.3+D 0.76+0.09/-0.05High DC Current Gain : hFE=2000(Min.) at VCE=2V, IC=3A._E 3.2 0.2+Low Saturation Voltage : VCE(sat)=1.5V(Max.) at IC

SEMICONDUCTOR KTD1415VTECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORINDUSTRIAL USE.HIGH POWER SWITCHING APPLICATIONS. ACHAMMER DRIVER, PULSE MOTOR DRIVER DIM MILLIMETERSSAPPLICATIONS._A 10.0 0.3+_+B 15.0 0.3EC _2.70 0.3+D 0.76+0.09/-0.05FEATURES_E 3.2 0.2+High DC Current Gain : hFE=2000(Min.) at VCE=3V, IC=3A. _F 3.0 0.3+_12.0 0.3G +

SEMICONDUCTOR KTD1414TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORSWITCHING APPLICATIONS. HAMMER DRIVER, PULSE MOTOR DRIVER ACAPPLICATIONS.DIM MILLIMETERSS_A 10.0 0.3+_+B 15.0 0.3EFEATURESC _2.70 0.3+D 0.76+0.09/-0.05High DC Current Gain : hFE=2000(Min.) at VCE=2V, IC=1A._E 3.2 0.2+_F 3.0 0.3+_12.0 0.3G +H 0.5+0.1/-0.05_+J 1

isc Silicon NPN Darlington Power Transistor KTD1414DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 80V(Min)(BR)CEOCollector-Emitter Saturation Voltage-: V = 1.5V(Max) @I = 3ACE(sat) CHigh DC Current Gain: h = 2000(Min) @ I = 1A, V = 2VFE C CEMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicati