KTD1411 Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: KTD1411

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 15 W

Tensión colector-base (Vcb): 80 V

Tensión colector-emisor (Vce): 60 V

Tensión emisor-base (Veb): 10 V

Corriente del colector DC máxima (Ic): 4 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Ganancia de corriente contínua (hFE): 3000

Encapsulados: TO126

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KTD1411 datasheet

 ..1. Size:384K  kec
 ktd1411.pdf pdf_icon

KTD1411

SEMICONDUCTOR KTD1411 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE DARLINGTON TRANSISTOR. A B D C FEATURES E High DC Current Gain hFE=3000(Min.) F (VCE=2V, IC=1A) G H DIM MILLIMETERS J A 8.3 MAX MAXIMUM RATING (Ta=25 ) K B 5.8 L C 0.7 CHARACTERISTIC SYMBOL RATING UNIT _ + D 3.2 0.1 E 3.5 VCBO Collector-Base Voltage 80 V _ + F 11.0 0.3 G 2.9

 8.1. Size:455K  kec
 ktd1415.pdf pdf_icon

KTD1411

SEMICONDUCTOR KTD1415 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR HIGH POWER SWITCHING APPLICATIONS. HAMMER DRIVER, PULSE MOTOR DRIVER A C APPLICATIONS. DIM MILLIMETERS S _ A 10.0 0.3 + _ + B 15.0 0.3 E FEATURES C _ 2.70 0.3 + D 0.76+0.09/-0.05 High DC Current Gain hFE=2000(Min.) at VCE=3V, IC=3A. _ E 3.2 0.2 + Low Saturation Voltage VCE(sat)=1.5V(Max.) at IC

 8.2. Size:444K  kec
 ktd1413.pdf pdf_icon

KTD1411

SEMICONDUCTOR KTD1413 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR HIGH POWER SWITCHING APPLICATIONS. HAMMER DRIVER, PULSE MOTOR DRIVER A C APPLICATIONS. DIM MILLIMETERS S _ A 10.0 0.3 + _ + B 15.0 0.3 E FEATURES C _ 2.70 0.3 + D 0.76+0.09/-0.05 High DC Current Gain hFE=2000(Min.) at VCE=2V, IC=3A. _ E 3.2 0.2 + Low Saturation Voltage VCE(sat)=1.5V(Max.) at IC

 8.3. Size:455K  kec
 ktd1415v.pdf pdf_icon

KTD1411

SEMICONDUCTOR KTD1415V TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR INDUSTRIAL USE. HIGH POWER SWITCHING APPLICATIONS. A C HAMMER DRIVER, PULSE MOTOR DRIVER DIM MILLIMETERS S APPLICATIONS. _ A 10.0 0.3 + _ + B 15.0 0.3 E C _ 2.70 0.3 + D 0.76+0.09/-0.05 FEATURES _ E 3.2 0.2 + High DC Current Gain hFE=2000(Min.) at VCE=3V, IC=3A. _ F 3.0 0.3 + _ 12.0 0.3 G +

MOSTRAR MÁS

Otros transistores... KTC9015S, KTC9016S, KTC9018S, KTC945, KTC945B, KTD1003, KTD1047B, KTD1347, TIP41C, KTD1415V, KTD1510, KTD1530, KTD1624, KTD1691, KTD1824, KTD1824E, KTD1854T