KTD1882 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

SEMICONDUCTOR KTD1882TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORAUDIO FREQUENCY POWER AMPLIFIER LOW SPEED SWITCHINGB CFEATURES Complementary to KTB1772.N DIM MILLIMETERSA 4.70 MAXEKB 4.80 MAXGC 3.70 MAXDD 0.45E 1.00MAXIMUM RATING (Ta=25 )F 1.27G 0.85CHARACTERISTIC SYMBOL RATING UNITH 0.45_HJ 14.00 + 0.50VCBOCollector-Base Voltage 40 V K 0.5

KTD1898 1A , 100V NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free SOT-89 FEATURES Small Flat Package 4 General Purpose Application 123CLASSIFICATION OF hFE(1) B C AE ECProduct-Rank KTD1898-O KTD1898-Y KTD1898-GR Range 70~140 120~240 200~400 B DMarking ZO ZY ZG

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate Transistors SOT-89-3L KTD1898 TRANSISTOR (NPN) 1. BASE FEATURES 2. COLLECTOR Small Flat Package General Purpose Application 3. EMITTER MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value UnitVCBO Collector-Base Voltage 100 V VCEO Collector-Emitter Voltage 80 V VEB

SEMICONDUCTOR KTD1824TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORFOR LOW-FREQUENCY AMPLIFICATION.FEATURES EHigh foward current transfer ratio hFE.M B MDIM MILLIMETERSLow collector to emitter saturation voltage VCE(sat)._A+2.00 0.20D2High emitter to base voltage VEBO._+B 1.25 0.15_+C 0.90 0.10Low noise voltage NV.31D 0.3+0.10/-0.05_

SEMICONDUCTOR KTD1824ETECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORFOR LOW-FREQUENCY AMPLIFICATION.FEATURES EHigh foward current transfer ratio hFE.BLow collector to emitter saturation voltage VCE(sat). DIM MILLIMETERS_+A 1.60 0.10DHigh emitter to base voltage VEBO. _+2 B 0.85 0.10_+C 0.70 0.10Low noise voltage NV.31D 0.27+0.10/-0.05_ESM type packa

SEMICONDUCTOR KTD1854TTECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORDRIVER APPLICATIONS.FEATURES EBAF amplifier, solenoid drivers, LED drivers. KDIM MILLIMETERSDarlington connection._A 2.9 + 0.2B 1.6+0.2/-0.1High DC current gain._C 0.70 + 0.0523Very small-sized package permitting sets to be made_D 0.4 + 0.1E 2.8+0.2/-0.3smaller and slimer._F 1.9 + 0

SEMICONDUCTOR KTD1898TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORGENERAL PURPOSE APPLICATION. FEATURESAC1W (Mounted on Ceramic Substrate).HSmall Flat Package. GComplementary to KTB1260. DIM MILLIMETERSA 4.70 MAXD _+D B 2.50 0.20K C 1.70 MAXD 0.45+0.15/-0.10MAXIMUM RATING (Ta=25 )F FE 4.25 MAX_+F 1.50 0.10CHARACTERISTIC SYMBOL RATING UNITG 0.40

SEMICONDUCTOR KTD1863TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORGENERAL PURPOSE APPLICATION.B DFEATURESHigh Breakdown Voltage and High Current: VCEO=80V, IC=1A.DIM MILLIMETERSPLow VCE(sat)DEPTH:0.2A 7.20 MAXComplementary to KTB1241. B 5.20 MAXCC 0.60 MAXSD 2.50 MAXQE 1.15 MAXKF 1.27G 1.70 MAXH 0.55 MAXFF_MAXIMUM RATING (Ta=25 ) J 14.00 + 0.50

KTD1898SOT-89-3L TRANSISTOR (NPN) FEATURES 1. BASE Small Flat Package2. COLLECTOR General Purpose Application 3. EMITTER MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value UnitVCBO Collector-Base Voltage 100 V VCEO Collector-Emitter Voltage 80 V VEBO Emitter-Base Voltage 5 V IC Collector Current 1 A PC Collector Power Dissipation 500 mW

KTD1898Epitaxial Planar NPN TransistorsSOT-89121. BASE32. COLLECTOR3. EMITTER(Ta=25 )ABSOLUTE MAXIMUM RATINGS CRating SymbolLimits UnitVdcCollector-Base VoltageV 100CBOVdcCollector-Emitter Voltage 80VCEOVdcEmitter-Base Voltage 5VEBOIC A(DC)1Collector CurrentICP 2 A (Pulse)*PC 0.5 WCollector Power DissipationT , TstgCJunction Temperat

SMD Type TransistorsNPN TransistorsKTD18981.70 0.1 Features Small Flat Package General Purpose Application0.42 0.10.46 0.11.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 100 Collector - Emitter Voltage VCEO 80 V Emitter - Base Voltage VEBO 5 Collector Current - Continuous IC