KTN2222AE . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: KTN2222AE
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.1 W
Tensión colector-base (Vcb): 75 V
Tensión colector-emisor (Vce): 40 V
Tensión emisor-base (Veb): 6 V
Corriente del colector DC máxima (Ic): 0.6 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 300 MHz
Capacitancia de salida (Cc): 8 pF
Ganancia de corriente contínua (hfe): 100
Paquete / Cubierta: ESM
Búsqueda de reemplazo de transistor bipolar KTN2222AE
KTN2222AE Datasheet (PDF)
ktn2222ae.pdf
SEMICONDUCTOR KTN2222AETECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORGENERAL PURPOSE APPLICATION.SWITCHING APPLICATION.EFEATURES BLow Leakage Current DDIM MILLIMETERS: ICEX=10nA(Max.) ; VCE=60V, VEB(OFF)=3V.2_+A 1.60 0.10Low Saturation Voltage _+B 0.85 0.1031_C 0.70 0.10+: VCE(sat)=0.3V(Max.) ; IC=150mA, IB=15mA.D 0.27+0.10/-0.05_Complementary
ktn2222s ktn2222as.pdf
SEMICONDUCTOR KTN2222S/ASTECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORGENERAL PURPOSE APPLICATION.SWITCHING APPLICATION.EL B LFEATURES DIM MILLIMETERS_+A 2.93 0.20Low Leakage Current B 1.30+0.20/-0.15: ICEX=10nA(Max.) ; VCE=60V, VEB(OFF)=3V. C 1.30 MAX23 D 0.40+0.15/-0.05Low Saturation Voltage E 2.40+0.30/-0.201G 1.90: VCE(sat)=0.3V(Max.) ; IC=150mA,
ktn2222 a.pdf
SEMICONDUCTOR KTN2222/ATECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORGENERAL PURPOSE APPLICATION.SWITCHING APPLICATION.B CFEATURES Low Leakage Current : ICEX=10nA(Max.) ; VCE=60V, VEB(OFF)=3V.N DIM MILLIMETERSLow Saturation Voltage A 4.70 MAXEKB 4.80 MAX: VCE(sat)=0.3V(Max.) ; IC=150mA, IB=15mA. GC 3.70 MAXDComplementary to the KTN2907/2907A.D 0.45E 1.00K
ktn2222s as.pdf
SEMICONDUCTOR KTN2222S/ASTECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORGENERAL PURPOSE APPLICATION.SWITCHING APPLICATION.EL B LFEATURES DIM MILLIMETERSLow Leakage Current _+2.93 0.20AB 1.30+0.20/-0.15: ICEX=10nA(Max.) ; VCE=60V, VEB(OFF)=3V.C 1.30 MAX2Low Saturation Voltage 3 D 0.45+0.15/-0.05E 2.40+0.30/-0.20: VCE(sat)=0.3V(Max.) ; IC=150mA, IB=15mA.1G
ktn2222u au.pdf
SEMICONDUCTOR KTN2222U/AUTECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORGENERAL PURPOSE APPLICATION.SWITCHING APPLICATION.EFEATURES M B MDIM MILLIMETERSLow Leakage Current _A+2.00 0.20D2: ICEX=10nA(Max.) ; VCE=60V, VEB(OFF)=3V. _+B 1.25 0.15_+C 0.90 0.10Low Saturation Voltage 31D 0.3+0.10/-0.05_E +2.10 0.20: VCE(sat)=0.3V(Max.) ; IC=150
Otros transistores... 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , D882P , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .
