KTX103E Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: KTX103E

Material: Si

Polaridad de transistor: NPN*PNP

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.2 W

Tensión colector-base (Vcb): 15 V

Tensión colector-emisor (Vce): 12 V

Tensión emisor-base (Veb): 6 V

Corriente del colector DC máxima (Ic): 0.5 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 320 MHz

Capacitancia de salida (Cc): 7.5(6.5) pF

Ganancia de corriente contínua (hFE): 270

Encapsulados: TES6

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KTX103E datasheet

 ..1. Size:50K  kec
 ktx103e.pdf pdf_icon

KTX103E

SEMICONDUCTOR KTX103E TECHNICAL DATA EPITAXIAL PLANAR NPN/PNP TRANSISTOR GENERAL PURPOSE APPLICATION. B B1 FEATURES Including two devices in TES6. (Thin Extreme Super mini type with 6 pin.) 1 6 DIM MILLIMETERS Simplify circuit design. _ A 1.6 + 0.05 _ A1 1.0 + 0.05 Reduce a quantity of parts and manufacturing process. 2 5 _ B 1.6 + 0.05 _ B1 1.2 + 0.05 C 0.50 3 4 _ D 0.2

 9.1. Size:59K  kec
 ktx102e.pdf pdf_icon

KTX103E

SEMICONDUCTOR KTX102E TECHNICAL DATA EPITAXIAL PLANAR PNP/NPN TRANSISTOR GENERAL PURPOSE APPLICATION. B B1 FEATURES Including two devices in TES6. (Thin Extreme Super mini type with 6 Pin.) 1 6 DIM MILLIMETERS Simplify circuit design. _ A 1.6 + 0.05 _ A1 1.0 + 0.05 Reduce a quantity of parts and manufacturing process. 2 5 _ B 1.6 + 0.05 _ B1 1.2 + 0.05 C 0.50 3 4 _ D 0.2 +

 9.2. Size:59K  kec
 ktx101e.pdf pdf_icon

KTX103E

SEMICONDUCTOR KTX101E TECHNICAL DATA EPITAXIAL PLANAR NPN/PNP TRANSISTOR GENERAL PURPOSE APPLICATION. B B1 FEATURES Including two devices in TES6. (Thin Extreme Super mini type with 6 pin.) 1 6 DIM MILLIMETERS Simplify circuit design. _ A 1.6 + 0.05 _ A1 1.0 + 0.05 Reduce a quantity of parts and manufacturing process. 2 5 _ B 1.6 + 0.05 _ B1 1.2 + 0.05 C 0.50 3 4 _ D 0.2 +

 9.3. Size:59K  kec
 ktx101u.pdf pdf_icon

KTX103E

SEMICONDUCTOR KTX101U TECHNICAL DATA EPITAXIAL PLANAR NPN/PNP TRANSISTOR GENERAL PURPOSE APPLICATION. FEATURES B Including two devices in US6. B1 (Ultra Super mini type with 6 leads) DIM MILLIMETERS 1 6 _ Simplify circuit design. A 2.00 + 0.20 _ 2 5 A1 1.3 + 0.1 Reduce a quantity of parts and manufacturing process. _ B 2.1 + 0.1 3 4 D _ B1 1.25 + 0.1 C 0.65 D 0.2+0.10/-0.0

MOSTRAR MÁS

Otros transistores... KTN2369AS, KTN2369AU, KTN2907AE, KTN2907AU, KTX101E, KTX101U, KTX102E, KTX102U, 2SD1047, KTX111T, KTX112T, KTX201E, KTX201U, KTX215E, KTX216U, KTX301E, KTX301U