KTX303U . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: KTX303U
Material: Si
Polaridad de transistor: PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.1 W
Tensión colector-base (Vcb): 15 V
Tensión colector-emisor (Vce): 12 V
Tensión emisor-base (Veb): 6 V
Corriente del colector DC máxima (Ic): 0.5 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 260 MHz
Capacitancia de salida (Cc): 6.5 pF
Ganancia de corriente contínua (hfe): 270
Paquete / Cubierta: USV
- Selección de transistores por parámetros
KTX303U Datasheet (PDF)
ktx303u.pdf

KTX303USEMICONDUCTOREPITAXIAL PLANAR PNP TRANSISTORTECHNICAL DATASCHOTTKY BARRIER TYPE DIODESWITCHING APPLICATION.LOW VOLTAGE HIGH SPEED SWITCHING.BFEATURES B1Including two(TR, Diode) devices in USV.1 5DIM MILLIMETERS_(Ultra Super Mini type with 5 leads) A 2.00 0.20+2 _+A1 1.3 0.1Simplify circuit design. _+B 2.1 0.13 4 D_+B1 1.25 0.1Reduce a q
ktx301e.pdf

KTX301ESEMICONDUCTOREPITAXIAL PLANAR PNP TRANSISTORTECHNICAL DATASILICON EPITAXIAL PLANAR TYPE DIODEGENERAL PURPOSE APPLICATION.ULTRA HIGH SPEED SWITCHING APPLICATION.BB1FEATURESIncluding two(TR, Diode) devices in TESV.(Thin Extreme Super mini type with 5pin.)1 5 DIM MILLIMETERS_A 1.6 0.05+Simplify circuit design. _+A1 1.0 0.052_+B 1.6 0.05Reduce
ktx302u.pdf

KTX302USEMICONDUCTOREPITAXIAL PLANAR PNP TRANSISTORTECHNICAL DATASCHOTTKY BARRIER TYPE DIODEGENERAL PURPOSE APPLICATION.LOW VOLTAGE HIGH SPEED SWITCHING.BFEATURES B1Including two(TR, Diode) devices in USV.1 5DIM MILLIMETERS_(Ultra Super Mini type with 5 leads) A 2.00 0.20+2 _+A1 1.3 0.1Simplify circuit design. _+B 2.1 0.13 4 D_+B1 1.25 0.1Redu
ktx301u.pdf

KTX301USEMICONDUCTOREPITAXIAL PLANAR PNP TRANSISTORTECHNICAL DATASILICON EPITAXIAL PLANAR TYPE DIODEGENERAL PURPOSE APPLICATION.ULTRA HIGH SPEED SWITCHING APPLICATION.BFEATURES B1Including two(TR, Diode) devices in USV.1 5DIM MILLIMETERS_+(Ultra Super Mini type with 5 leads) 2.00 0.20A_2+1.3 0.1A1Simplify circuit design. _+B 2.1 0.13 4 D_+
Otros transistores... 2SA1801 , 2SA1802 , 2SA1802A , 2SA1803 , 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SD2499 , 2SA1805 , 2SA1805O , 2SA1805R , 2SA1806 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C .
History: 2N2278 | DMG564H2 | TI3034 | PBSS5160PAPS | NSBC114EDXV6 | CSD794AY | 2N841-51
History: 2N2278 | DMG564H2 | TI3034 | PBSS5160PAPS | NSBC114EDXV6 | CSD794AY | 2N841-51



Liste
Recientemente añadidas las descripciónes de los transistores:
BJT: GA1A4M | SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550
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