2N5982 Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2N5982
Material: Si
Polaridad de transistor: PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 90 W
Tensión colector-base (Vcb): 100 V
Tensión colector-emisor (Vce): 80 V
Tensión emisor-base (Veb): 5 V
Corriente del colector DC máxima (Ic): 8 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (fT): 2 MHz
Capacitancia de salida (Cc): 350 pF
Ganancia de corriente contínua (hFE): 20
Encapsulados: TO126
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2N5982 datasheet
2n5989 2n5990 2n5991.pdf
Product Specification www.jmnic.com Silicon NPN Power Transistors 2N5989 2N5990 2N5991 DESCRIPTION With TO-3PN package Complement to type 2N5986 2N5987 2N5988 Low collector-emitter saturation voltage APPLICATIONS Designed for use in general purpose power amplifier and switching circuits. PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base 3
2n5989.pdf
isc Silicon NPN Power Transistor 2N5989 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 60V(Min) (BR)CEO Low Collector-Emitter Saturation Voltage 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in general purpose amplifier and switching circuits ABSOLUTE MAXIMUM RATINGS(T =25 )
2n5989 2n5990 2n5991.pdf
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N5989 2N5990 2N5991 DESCRIPTION With TO-3PN package Complement to type 2N5986/5987/5988 Low collector saturation voltage APPLICATIONS Designed for use in general purpose power amplifier and switching circuits. PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fig.
Otros transistores... 2N5975 , 2N5976 , 2N5977 , 2N5978 , 2N5979 , 2N598 , 2N5980 , 2N5981 , 2SD669A , 2N5983 , 2N5984 , 2N5985 , 2N5986 , 2N5987 , 2N5988 , 2N5989 , 2N599 .
History: 2N524A | 2SB1392B | 2N5219 | TTC13003L
History: 2N524A | 2SB1392B | 2N5219 | TTC13003L
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