MPS8050 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: MPS8050
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.625 W
Tensión colector-base (Vcb): 40 V
Tensión colector-emisor (Vce): 25 V
Tensión emisor-base (Veb): 6 V
Corriente del colector DC máxima (Ic): 1.5 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 190 MHz
Capacitancia de salida (Cc): 9 pF
Ganancia de corriente contínua (hfe): 85
Paquete / Cubierta: TO92
Búsqueda de reemplazo de transistor bipolar MPS8050
MPS8050 Datasheet (PDF)
mps8050.pdf
SEMICONDUCTOR MPS8050TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORHIGH CURRENT APPLICATION.B CFEATURE Complementary to MPS8550.N DIM MILLIMETERSA 4.70 MAXEKB 4.80 MAXGMAXIMUM RATING (Ta=25 )C 3.70 MAXDD 0.45CHARACTERISTIC SYMBOL RATING UNITE 1.00F 1.27VCBOCollector-Base Voltage 40 VG 0.85H 0.45VCEOCollector-Emitter Voltage 25 V _HJ 14.00 + 0.
mps8050sc.pdf
SEMICONDUCTOR MPS8050SCTECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORHIGH CURRENT APPLICATION. FEATUREComplementary to MPS8550SC.MAXIMUM RATING (Ta=25)CHARACTERISTIC SYMBOL RATING UNITVCBOCollector-Base Voltage 40 VVCEOCollector-Emitter Voltage 25 VVEBOEmitter-Base Voltage 5 VICCollector Current 1,200 mAPC *Collector Power Dissipation 350 mWTjJunction Te
mps8050s.pdf
SEMICONDUCTOR MPS8050STECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORHIGH CURRENT APPLICATION. FEATUREEL B LComplementary to MPS8550S.DIM MILLIMETERS_+A 2.93 0.20B 1.30+0.20/-0.15C 1.30 MAX23 D 0.40+0.15/-0.05E 2.40+0.30/-0.201G 1.90MAXIMUM RATING (Ta=25)H 0.95J 0.13+0.10/-0.05CHARACTERISTIC SYMBOL RATING UNITK 0.00 ~ 0.10QL 0.55VCBO P PCo
mps8098r.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MPS8098/DAmplifier TransistorsNPNCOLLECTOR COLLECTOR3 3 MPS8098MPS8099*2 2BASE BASEPNPNPN PNPMPS85981 1EMITTER EMITTER*MPS8599MAXIMUM RATINGSVoltage and current are negativeMPS8098 MPS8099 for PNP transistorsMPS8598 MPS8599Rating Symbol UnitCollectorEmitter Voltage VCEO 60 80 Vdc*Mot
mps8098 1.pdf
DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D186MPS8098NPN general purpose transistor1997 May 26Product specificationFile under Discrete Semiconductors, SC04Philips Semiconductors Product specificationNPN general purpose transistor MPS8098FEATURES PINNING Low current (max. 100 mA)PIN DESCRIPTION Low voltage (max. 60 V).1 collector2 baseAPPLICATIONS
mps8098.pdf
Discrete POWER & SignalTechnologiesMPS8098C TO-92BENPN General Purpose AmplifierThis device is designed for use as general purpose amplifiersand switches requiring collector currents to 300 mA. Sourcedfrom Process 10. See PN100 for characteristics.Absolute Maximum Ratings* TA = 25C unless otherwise notedSymbol Parameter Value UnitsVCEO Collector-Emitter Voltage 60 VV
mps8097.pdf
TMCentralSemiconductor Corp.145 Adams AvenueHauppauge, NY 11788 USATel: (631) 435-1110 Fax: (631) 435-1824www.centralsemi.com
mps8099rlrpg.pdf
NPN - MPS8099; PNP -MPS8599Amplifier TransistorsVoltage and Current are Negativefor PNP Transistorshttp://onsemi.comFeaturesNPN PNP These are Pb-Free Devices*COLLECTOR COLLECTOR3 3MAXIMUM RATINGS2 2BASE BASERating Symbol Value UnitCollector-Emitter Voltage VCEO 80 Vdc1 1Collector-Base Voltage VCBO 80 VdcEMITTER EMITTEREmitter-Base Voltage VEBO 6.0 VdcC
mps8099 mps8599.pdf
NPN - MPS8099; PNP -MPS8599Preferred Device Amplifier TransistorsVoltage and Current are Negativefor PNP Transistorshttp://onsemi.comFeaturesNPN PNP Pb-Free Packages are Available*COLLECTOR COLLECTOR3 3MAXIMUM RATINGS2 2BASE BASERating Symbol Value UnitCollector-Emitter Voltage VCEO 80 Vdc1 1Collector-Base Voltage VCBO 80 VdcEMITTER EMITTEREmitter-Base
mps8099g.pdf
NPN - MPS8099; PNP -MPS8599Amplifier TransistorsVoltage and Current are Negativefor PNP Transistorshttp://onsemi.comFeaturesNPN PNP These are Pb-Free Devices*COLLECTOR COLLECTOR3 3MAXIMUM RATINGS2 2BASE BASERating Symbol Value UnitCollector-Emitter Voltage VCEO 80 Vdc1 1Collector-Base Voltage VCBO 80 VdcEMITTER EMITTEREmitter-Base Voltage VEBO 6.0 VdcC
mps8098 99.pdf
Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyNPN SILICON PLANAR EPITAXIAL TRANSISTORS MPS8098MPS8099TO-92Plastic PackageCBEAmplifier TransistorsABSOLUTE MAXIMUM RATINGDESCRIPTION SYMBOL MPS8098 MPS8099 UNITSCollector Base Voltage VCBO 60 80 VCollector Emitter Voltage VCEO 60 80 VEmitter Base Voltage VEBO 6.0 VCollector Cu
mps8099.pdf
DIP Type TransistorsNPN TransistorsMPS8099 (KPS8099)TO-92Unit: mm+0.254.58 0.15 Features Collector Current Capability IC=0.5A Collector Emitter Voltage VCEO=80V0.46 0.10+0.101.27TYP 1.27TYP 0.38 0.051 2 3[1.27 0.20] [1.27 0.20]3.60 0.201. Emitter2. Base(R2.29)3. Collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Uni
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