KTC812T Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: KTC812T
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.9 W
Tensión colector-base (Vcb): 50 V
Tensión colector-emisor (Vce): 20 V
Tensión emisor-base (Veb): 25 V
Corriente del colector DC máxima (Ic): 0.3 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (fT): 30 MHz
Capacitancia de salida (Cc): 4.8 pF
Ganancia de corriente contínua (hFE): 200
Encapsulados: TS6
Búsqueda de reemplazo de KTC812T
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KTC812T datasheet
ktc812t.pdf
SEMICONDUCTOR KTC812T TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR FOR MUTING AND SWITCHING APPLICATION. FEATURES E K B K High Emitter-Base Voltage VEBO=25V(Min.) DIM MILLIMETERS High Reverse hFE _ A 2.9 + 0.2 16 B 1.6+0.2/-0.1 Reverse hFE=150(Typ.) (VCE=-2V, IC=-4mA) _ C 0.70 + 0.05 2 5 _ + D 0.4 0.1 Low on Resistance RON=1 (Typ.), (IB=5mA) E 2.8+0.2/-0.3 _ F 1.9
ktc812u.pdf
SEMICONDUCTOR KTC812U TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. B FEATURES B1 A super-minimold package houses 2 transistor. DIM MILLIMETERS 1 6 _ Excellent temperature response between these 2 transistor. A 2.00 + 0.20 _ 2 5 A1 1.3 + 0.1 High pairing property in hFE. _ B 2.1 + 0.1 3 4 D _ B1 1.25 + 0.1 The follwing char
ktc812e.pdf
SEMICONDUCTOR KTC812E TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. B B1 FEATURES A super-minimold package houses 2 transistor. 1 6 DIM MILLIMETERS Excellent temperature response between these 2 transistor. _ A 1.6 + 0.05 _ A1 1.0 + 0.05 High pairing property in hFE. 5 2 _ B 1.6 + 0.05 _ B1 1.2 + 0.05 The follwing characteri
ktc811e.pdf
SEMICONDUCTOR KTC811E TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. B B1 FEATURES A super-minimold package houses 2 transistor. 1 6 DIM MILLIMETERS Excellent temperature response between these 2 transistor. _ A 1.6 + 0.05 _ A1 1.0 + 0.05 High pairing property in hFE. 5 2 _ B 1.6 + 0.05 _ B1 1.2 + 0.05 The follwing characteri
Otros transistores... TIP32CF, TIP35CA, TIP36CA, TIP41CF, TIP42CF, KTC2874, KTC2875, KTC2876, MPSA42, KTC814U, KRA101S, KRA102S, KRA103, KRA103S, KRA104, KRA104S, KRA105
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