KRA104S
. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: KRA104S
Código: PD
Material: Si
Polaridad de transistor: Pre-Biased-PNP
Resistencia de Entrada Base R1 = 47 kOhm
Resistencia Base-Emisor R2 = 47 kOhm
Ratio típica de resistencia R1/R2 = 1
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.2
W
Tensión colector-emisor (Vce): 50
V
Corriente del colector DC máxima (Ic): 0.1
A
Temperatura operativa máxima (Tj): 150
°C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 200
MHz
Ganancia de corriente contínua (hfe): 80
Paquete / Cubierta:
SOT-23
Búsqueda de reemplazo de transistor bipolar KRA104S
KRA104S
Datasheet (PDF)
9.1. Size:389K kec
kra107m-kra109m.pdf 
SEMICONDUCTOR KRA107M~KRA109MTECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTORSWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. BFEATURES With Built-in Bias ResistorsSimplify Circuit DesignDIM MILLIMETERSOA 3.20 MAXReduce a Quantity of Parts and Manufacturing ProcessHM B 4.30 MAXC 0.55 MAX_D 2.40 + 0.15E 1.27F 2.30C_+G 14.00
9.2. Size:391K kec
kra107s-kra109s.pdf
SEMICONDUCTOR KRA107S~KRA109STECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTORSWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. EL B LFEATURES DIM MILLIMETERS_+A 2.93 0.20With Built-in Bias Resistors.B 1.30+0.20/-0.15C 1.30 MAXSimplify Circuit Design.23 D 0.40+0.15/-0.05Reduce a Quantity of Parts and Manufacturing Process.E 2.40+0.30
9.3. Size:377K kec
kra107-kra109.pdf
SEMICONDUCTOR KRA107~KRA109TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTORSWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. B CFEATURES With Built-in Bias ResistorsSimplify Circuit DesignReduce a Quantity of Parts and Manufacturing ProcessN DIM MILLIMETERSA 4.70 MAXEKB 4.80 MAXGC 3.70 MAXDD 0.45E 1.00F 1.27G 0.85EQUIVALENT CI
9.4. Size:1013K kec
kra101s-kra106s.pdf
SEMICONDUCTOR KRA101S~KRA106STECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTORSWITCHING APPLICATION.INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION.EL B LFEATURESDIM MILLIMETERSWith Built-in Bias Resistors._+A 2.93 0.20B 1.30+0.20/-0.15Simplify Circuit Design.C 1.30 MAX23 D 0.40+0.15/-0.05Reduce a Quantity of Parts and Manufacturing Process.E 2.40+0.30/-0
9.5. Size:422K kec
kra101m-kra106m.pdf
SEMICONDUCTOR KRA101M~KRA106MTECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTORSWITCHING APPLICATION.INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION.BFEATURESWith Built-in Bias Resistors.Simplify Circuit Design.DIM MILLIMETERSOA 3.20 MAXReduce a Quantity of Parts and Manufacturing Process.HM B 4.30 MAXC 0.55 MAX_D 2.40 + 0.15E 1.27F 2.30C_+G 14.00
9.6. Size:398K kec
kra101-kra106.pdf
SEMICONDUCTOR KRA101~KRA106TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTORSWITCHING APPLICATION.INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION.B CFEATURESWith Built-in Bias Resistors.Simplify Circuit Design.Reduce a Quantity of Parts and Manufacturing Process.N DIM MILLIMETERSA 4.70 MAXEKB 4.80 MAXGC 3.70 MAXDD 0.45E 1.00F 1.27G 0.85H 0.45_H
9.7. Size:1357K kexin
kra101s-106s.pdf
SMD Type TransistorsPNP TransistorsKRA101S ~ KRA106SSOT-23Unit: mm+0.12.9 -0.1+0.10.4-0.13 Features With Built-in Bias Resistors. Simplify Circuit Design.1 2 Reduce a Quantity of Parts and Manufacturing Process.+0.1+0.050.95 -0.1 0.1 -0.01+0.11.9 -0.11.IN(B)2.COMMON(E)3.OUT(C)BIAS RESISTOR VALUESTYPE NO.R1(k ) R2(k )OUTKRA101S
Otros transistores... 2N3200
, 2N3201
, 2N3202
, 2N3203
, 2N3204
, 2N3205
, 2N3206
, 2N3207
, B772
, 2N3209
, 2N3209AQF
, 2N3209CSM
, 2N3209DCSM
, 2N3209L
, 2N321
, 2N3210
, 2N3211
.
