KRA110 Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: KRA110
Material: Si
Polaridad de transistor: Pre-Biased-PNP
Resistencia de Entrada Base R1 = 4.7 kOhm
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.625 W
Tensión colector-base (Vcb): 50 V
Tensión colector-emisor (Vce): 50 V
Tensión emisor-base (Veb): 5 V
Corriente del colector DC máxima (Ic): 0.1 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (fT): 250 MHz
Ganancia de corriente contínua (hFE): 120
Encapsulados: TO-92
Búsqueda de reemplazo de KRA110
- Selecciónⓘ de transistores por parámetros
KRA110 datasheet
kra110s-kra114s.pdf
SEMICONDUCTOR KRA110S KRA114S EPITAXIAL PLANAR PNP TRANSISTOR TECHNICAL DATA SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. E L B L FEATURES DIM MILLIMETERS _ + A 2.93 0.20 With Built-in Bias Resistors. B 1.30+0.20/-0.15 Simplify Circuit Design. C 1.30 MAX 2 3 D 0.40+0.15/-0.05 Reduce a Quantity of Parts and Manufacturing Process. E 2.40+0.30/
kra110m-kra114m.pdf
SEMICONDUCTOR KRA110M KRA114M EPITAXIAL PLANAR PNP TRANSISTOR TECHNICAL DATA SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. B FEATURES With Built-in Bias Resistors. Simplify Circuit Design. DIM MILLIMETERS O A 3.20 MAX Reduce a Quantity of Parts and Manufacturing Process. H M B 4.30 MAX C 0.55 MAX _ D 2.40 + 0.15 E 1.27 F 2.30 C _ + G 14.
kra110-kra114.pdf
SEMICONDUCTOR KRA110 KRA114 EPITAXIAL PLANAR PNP TRANSISTOR TECHNICAL DATA SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. B C FEATURES With Built-in Bias Resistors. Simplify Circuit Design. Reduce a Quantity of Parts and Manufacturing Process. N DIM MILLIMETERS A 4.70 MAX E K B 4.80 MAX G C 3.70 MAX D D 0.45 E 1.00 F 1.27 EQUIVALENT CIRCUIT
Otros transistores... KRA106, KRA106S, KRA107, KRA107S, KRA108, KRA108S, KRA109, KRA109S, BD139, KRA110S, KRA111, KRA111S, KRA112, KRA112S, KRA113, KRA113M, KRA113S
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