KRA121M . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: KRA121M
Material: Si
Polaridad de transistor: Pre-Biased-PNP
Resistencia de Entrada Base R1 = 47 kOhm
Resistencia Base-Emisor R2 = 10 kOhm
Ratio típica de resistencia R1/R2 = 4.7
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.4 W
Tensión colector-emisor (Vce): 50 V
Corriente del colector DC máxima (Ic): 0.1 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 250 MHz
Ganancia de corriente contínua (hfe): 33
Paquete / Cubierta: TO-92M
Búsqueda de reemplazo de transistor bipolar KRA121M
KRA121M Datasheet (PDF)
kra116-kra122.pdf
SEMICONDUCTOR KRA116~KRA122TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTORSWITCHING APPLICATION.INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATIONB CFEATURESWith Built-in Bias Resistors.Simplify Circuit Design.Reduce a Quantity of Parts and Manufacturing Process.N DIM MILLIMETERSA 4.70 MAXEKB 4.80 MAXGC 3.70 MAXDD 0.45E 1.00F 1.27G 0.85H 0.45_H
kra116s-kra122s.pdf
SEMICONDUCTOR KRA116S~KRA122STECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTORSWITCHING APPLICATION.INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATIONEL B LFEATURESDIM MILLIMETERS_+2.93 0.20With Built-in Bias Resistors. AB 1.30+0.20/-0.15Simplify Circuit Design.C 1.30 MAX23 D 0.45+0.15/-0.05Reduce a Quantity of Parts and Manufacturing Process.E 2.40+0.30/-0.201
kra116m-kra122m.pdf
SEMICONDUCTOR KRA116M~KRA122MTECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTORSWITCHING APPLICATION.INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATIONBFEATURESWith Built-in Bias Resistors.DIM MILLIMETERSOSimplify Circuit Design.A 3.20 MAXHM B 4.30 MAXReduce a Quantity of Parts and Manufacturing Process.C 0.55 MAX_D 2.40 + 0.15E 1.27F 2.30C_+G 14.00 0.50H
Otros transistores... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
Liste
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