KRA308E . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: KRA308E
   Código: PI
   Material: Si
   Polaridad de transistor: Pre-Biased-PNP
   Resistencia de Entrada Base R1 = 22 kOhm
   Resistencia Base-Emisor R2 = 47 kOhm
   Ratio típica de resistencia R1/R2 = 0.47

ESPECIFICACIONES MÁXIMAS

   Disipación total del dispositivo (Pc): 0.1 W
   Tensión colector-emisor (Vce): 50 V
   Corriente del colector DC máxima (Ic): 0.1 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   Transición de frecuencia (ft): 200 MHz
   Ganancia de corriente contínua (hfe): 80
   Paquete / Cubierta: ESM

Búsqueda de reemplazo de transistor bipolar KRA308E

KRA308E Datasheet (PDF)

8.1. Size:363K kec
kra307-kra308.pdf

SEMICONDUCTOR KRA307~KRA308TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTORSWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. EFEATURES M B MDIM MILLIMETERSWith Built-in Bias Resistors_+A 2.00 0.20D2Simplify Circuit Design_+B 1.25 0.15_+C 0.90 0.10Reduce a Quantity of Parts and Manufacturing Process31D 0.3+0.10/-0.05_

9.1. Size:67K kec
kra301e-kra306e.pdf

SEMICONDUCTOR KRA301E~KRA306ETECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTORSWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. EFEATURES BDIM MILLIMETERSWith Built-in Bias Resistors._+A 1.60 0.10DSimplify Circuit Design. _+2 B 0.85 0.10_+C 0.70 0.10Reduce a Quantity of Parts and Manufacturing Process.31D 0.27+0.10/-0.05_

9.2. Size:107K kec
kra301v-kra306v 1.pdf

SEMICONDUCTOR KRA301V~KRA306VTECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTORSWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. EFEATURES BWith Built-in Bias Resistors.Simplify Circuit Design.DIM MILLIMETERS2_Reduce a Quantity of Parts and Manufacturing Process. A 1.2 +0.05_B 0.8 +0.05High Packing Density. 13_C 0.5 + 0.05_D 0.3 + 0.05

9.3. Size:87K kec
kra307e-kra309e.pdf

SEMICONDUCTOR KRA307E~KRA309ETECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTORSWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. EFEATURES BDIM MILLIMETERSWith Built-in Bias Resistors_+A 1.60 0.10DSimplify Circuit Design _+2 B 0.85 0.10_+C 0.70 0.10Reduce a Quantity of Parts and Manufacturing Process31D 0.27+0.10/-0.05_High Pack

9.4. Size:347K kec
kra302vs.pdf

SEMICONDUCTOR KRA302VSTECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTORSWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. EFEATURES BWith Built-in Bias Resistors.Simplify Circuit Design.DIM MILLIMETERS2_Reduce a Quantity of Parts and Manufacturing Process. A 1.2 +0.05_B 0.8 +0.05High Packing Density. 13_C 0.5 + 0.05_D 0.3 + 0.05

9.5. Size:388K kec
kra301-kra306.pdf

SEMICONDUCTOR KRA301~KRA306TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTORSWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. EFEATURES M B MDIM MILLIMETERSWith Built-in Bias Resistors._+A 2.00 0.20D2_Simplify Circuit Design.B 1.25 + 0.15_+C 0.90 0.10Reduce a Quantity of Parts and Manufacturing Process. 31D 0.3+0.10/-0.05_

9.6. Size:389K kec
kra307v-kra309v 1.pdf

SEMICONDUCTOR KRA307V~KRA309VTECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTORSWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. EFEATURES BWith Built-in Bias ResistorsSimplify Circuit DesignDIM MILLIMETERS2_Reduce a Quantity of Parts and Manufacturing Process A 1.2 +0.05_B 0.8 +0.05High Packing Density. 13_C 0.5 + 0.05_D 0.3 +

9.7. Size:390K kec
kra309.pdf

SEMICONDUCTOR KRA309TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTORSWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. EFEATURES M B MDIM MILLIMETERSWith Built-in Bias Resistors_+A 2.00 0.20D2Simplify Circuit Design_+B 1.25 0.15_+C 0.90 0.10Reduce a Quantity of Parts and Manufacturing Process31D 0.3+0.10/-0.05_+Hi

9.8. Size:388K kec
kra307e-kra309e 1.pdf