2N602 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2N602
Material: Ge
Polaridad de transistor: PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.12 W
Tensión colector-base (Vcb): 30 V
Tensión colector-emisor (Vce): 25 V
Tensión emisor-base (Veb): 1 V
Corriente del colector DC máxima (Ic): 0.01 A
Temperatura operativa máxima (Tj): 85 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (fT): 5 MHz
Capacitancia de salida (Cc): 8 pF
Ganancia de corriente contínua (hFE): 20
Encapsulados: TO5
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2N602 datasheet
2n6027 2n6028.pdf
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by 2N6027/D 2N6027 Programmable 2N6028 Unijunction Transistors Silicon Programmable Unijunction Transistors . . . designed to enable the engineer to program unijunction characteristics such as PUTs RBB, , IV, and IP by merely selecting two resistor values. Application includes 40 VOLTS thyristor-trigger, oscillator,
2n5629 2n5630 2n6029 2n6030.pdf
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2n6027 2n6028.pdf
2N6027, 2N6028 Preferred Device Programmable Unijunction Transistor Programmable Unijunction Transistor Triggers Designed to enable the engineer to program unijunction http //onsemi.com characteristics such as RBB, , IV, and IP by merely selecting two resistor values. Application includes thyristor trigger, oscillator, pulse PUTs and timing circuits. These devices may als
2n6029 2n6030.pdf
Product Specification www.jmnic.com Silicon PNP Power Transistors 2N6029 2N6030 DESCRIPTION With TO-3 package Complement to type 2N5629 2N5630 APPLICATIONS For high voltage and high power amplifier applications PINNING PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-3) and symbol Absolute maximum ratings(Ta= ) SYMBOL PARAMETER CONDITI
Otros transistores... 2N6010, 2N6011, 2N6012, 2N6013, 2N6014, 2N6015, 2N6016, 2N6017, S8050, 2N6021, 2N6022, 2N6024, 2N6025, 2N6026, 2N6029, 2N602A, 2N603
History: LBC807-25LT3G
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