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2N6021 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: 2N6021
   Material: Si
   Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 36 W
   Tensión colector-base (Vcb): 80 V
   Tensión colector-emisor (Vce): 70 V
   Tensión emisor-base (Veb): 7 V
   Corriente del colector DC máxima (Ic): 4 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 0.8 MHz
   Ganancia de corriente contínua (hfe): 30
   Paquete / Cubierta: TO220

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2N6021 Datasheet (PDF)

 9.1. Size:120K  motorola
2n6027 2n6028.pdf

2N6021
2N6021

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby 2N6027/D2N6027Programmable2N6028Unijunction TransistorsSilicon Programmable Unijunction Transistors. . . designed to enable the engineer to program unijunction characteristics such asPUTsRBB, , IV, and IP by merely selecting two resistor values. Application includes40 VOLTSthyristor-trigger, oscillator,

 9.2. Size:67K  central
2n5629 2n5630 2n6029 2n6030.pdf

2N6021

145 Adams Avenue, Hauppauge, NY 11788 USATel: (631) 435-1110 Fax: (631) 435-1824

 9.3. Size:148K  onsemi
2n6027 2n6028.pdf

2N6021
2N6021

2N6027, 2N6028Preferred DeviceProgrammableUnijunction TransistorProgrammable UnijunctionTransistor TriggersDesigned to enable the engineer to program unijunction http://onsemi.comcharacteristics such as RBB, , IV, and IP by merely selecting tworesistor values. Application includes thyristortrigger, oscillator, pulsePUTsand timing circuits. These devices may als

 9.4. Size:104K  jmnic
2n6029 2n6030.pdf

2N6021
2N6021

Product Specification www.jmnic.com Silicon PNP Power Transistors 2N6029 2N6030 DESCRIPTION With TO-3 package Complement to type 2N5629 2N5630 APPLICATIONS For high voltage and high power amplifier applications PINNING PIN DESCRIPTION1 Base 2 Emitter3 CollectorFig.1 simplified outline (TO-3) and symbol Absolute maximum ratings(Ta=) SYMBOL PARAMETER CONDITI

 9.5. Size:131K  inchange semiconductor
2n6029 2n6030.pdf

2N6021
2N6021

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2N6029 2N6030 DESCRIPTION With TO-3 package Complement to type 2N5629 2N5630 High power dissipations APPLICATIONS For high voltage and high power amplifier applications PINNING PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (TO-3) and symbol3 CollectorAbsolute maximum rating

Otros transistores... 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , 2SA1837 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .

 

 
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