2N6036 Todos los transistores

 ..1. Size:243K  motorola
 2n6035 2n6036 2n6038 2n6039.pdf

Order this document MOTOROLA by 2N6035/D SEMICONDUCTOR TECHNICAL DATA 2N6030 thru 2N6031 (See 2N5630) Plastic Darlington Complementary Silicon Power PNP Transistors 2N6035 . . . designed for general purpose amplifier and low speed switching applications. High DC Current Gain 2N6036* hFE = 2000 (Typ) @ IC = 2.0 Adc NPN Collector Emitter Sustaining Voltage @

 ..2. Size:174K  st
 2n6034 2n6035 2n6036 2n6037 2n6038 2n6039.pdf

 ..3. Size:243K  st
 2n6036 2n6039.pdf

2N6036 2N6039 COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS 2N6036 IS A STMicroelectronics PREFERRED SALESTYPE COMPLEMENTARY PNP - NPN DEVICES INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE APPLICATIONS GENERAL PURPOSE SWITCHING GENERAL PURPOSE AMPLIFIER 1 2 3 DESCRIPTION The 2N6036 and 2N6039 are complementary SOT-32 silicon power Darlington transistors

 ..4. Size:123K  inchange semiconductor
 2n6034 2n6035 2n6036.pdf

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2N6034 2N6035 2N6036 DESCRIPTION With TO-126 package Complement to type 2N6037/6038/6039 DARLINGTON High DC current gain APPLICATIONS Designed for general-purpose amplifier and low-speed switching applications PINNING(see Fig.2) PIN DESCRIPTION 1 Emitter 2 Collector 3 Base Absolute ma

 ..5. Size:187K  inchange semiconductor
 2n6036.pdf

INCHANGE Semiconductor isc Silicon PNP Darlington Power Transistor 2N6036 DESCRIPTION Collector Emitter Sustaining Voltage V = CEO(SUS) -80V(Min.) DC Current Gain h = 750(Min) @ I = -2A FE C Complement to Type 2N6039 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for general-purpose amplifier and low-sp

 0.1. Size:140K  onsemi
 2n6036g.pdf

2N6034G, 2N6035G, 2N6036G (PNP), 2N6038G, 2N6039G (NPN) Plastic Darlington Complementary Silicon http //onsemi.com Power Transistors 4.0 AMPERES DARLINGTON Plastic Darlington complementary silicon power transistors are designed for general purpose amplifier and low-speed switching COMPLEMENTARY SILICON applications. POWER TRANSISTORS Features 40, 60, 80 VOLTS, 40 WATTS ESD Ra

 0.2. Size:140K  onsemi
 2n6035g 2n6035g 2n6036g.pdf

2N6034G, 2N6035G, 2N6036G (PNP), 2N6038G, 2N6039G (NPN) Plastic Darlington Complementary Silicon http //onsemi.com Power Transistors 4.0 AMPERES DARLINGTON Plastic Darlington complementary silicon power transistors are designed for general purpose amplifier and low-speed switching COMPLEMENTARY SILICON applications. POWER TRANSISTORS Features 40, 60, 80 VOLTS, 40 WATTS ESD Ra

 9.1. Size:253K  motorola
 2n5630 2n6030 2n5631 2n6031.pdf

Order this document MOTOROLA by 2N5630/D SEMICONDUCTOR TECHNICAL DATA NPN 2N5630 High-Voltage High Power 2N5631 Transistors PNP . . . designed for use in high power audio amplifier applications and high voltage 2N6030 switching regulator circuits. High Collector Emitter Sustaining Voltage 2N6031 VCEO(sus) = 120 Vdc 2N5630, 2N6030 VCEO(sus) = 140 Vdc 2N5631, 2N603

 9.2. Size:67K  central
 2n5629 2n5630 2n6029 2n6030.pdf

145 Adams Avenue, Hauppauge, NY 11788 USA Tel (631) 435-1110 Fax (631) 435-1824

 9.3. Size:140K  onsemi
 2n6038g.pdf

2N6034G, 2N6035G, 2N6036G (PNP), 2N6038G, 2N6039G (NPN) Plastic Darlington Complementary Silicon http //onsemi.com Power Transistors 4.0 AMPERES DARLINGTON Plastic Darlington complementary silicon power transistors are designed for general purpose amplifier and low-speed switching COMPLEMENTARY SILICON applications. POWER TRANSISTORS Features 40, 60, 80 VOLTS, 40 WATTS ESD Ra

 9.4. Size:140K  onsemi
 2n6034g 2n6034g 2n6038g.pdf

2N6034G, 2N6035G, 2N6036G (PNP), 2N6038G, 2N6039G (NPN) Plastic Darlington Complementary Silicon http //onsemi.com Power Transistors 4.0 AMPERES DARLINGTON Plastic Darlington complementary silicon power transistors are designed for general purpose amplifier and low-speed switching COMPLEMENTARY SILICON applications. POWER TRANSISTORS Features 40, 60, 80 VOLTS, 40 WATTS ESD Ra

 9.5. Size:109K  onsemi
 2n6039g.pdf

(PNP) 2N6034, 2N6035, 2N6036; (NPN) 2N6038, 2N6039 Plastic Darlington Complementary Silicon http //onsemi.com Power Transistors Plastic Darlington complementary silicon power transistors are 4.0 AMPERES DARLINGTON designed for general purpose amplifier and low-speed switching COMPLEMENTARY SILICON applications. POWER TRANSISTORS Features 40, 60, 80 VOLTS, 40 WATTS ESD Ratings

 9.6. Size:290K  no
 2n6032.pdf

 9.7. Size:126K  cdil
 2n6034-39.pdf

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company (PNP) SILICON POWER DARLINGTON TRANSISTORS 2N6034, 2N6035, 2N6036 (NPN) 2N6037, 2N6038, 2N6039 TO126 Plastic Package E C B Designed for General -Purpose Amplifier & Low Speed Switching Applications. ABSOLUTE MAXIMUM RATINGS(Ta=25 C unless specified otherwise) DESCRIPTION SYMBOL 2n6034 2N6

 9.8. Size:104K  jmnic
 2n6029 2n6030.pdf

Product Specification www.jmnic.com Silicon PNP Power Transistors 2N6029 2N6030 DESCRIPTION With TO-3 package Complement to type 2N5629 2N5630 APPLICATIONS For high voltage and high power amplifier applications PINNING PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-3) and symbol Absolute maximum ratings(Ta= ) SYMBOL PARAMETER CONDITI

 9.9. Size:131K  inchange semiconductor
 2n6029 2n6030.pdf

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2N6029 2N6030 DESCRIPTION With TO-3 package Complement to type 2N5629 2N5630 High power dissipations APPLICATIONS For high voltage and high power amplifier applications PINNING PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-3) and symbol 3 Collector Absolute maximum rating

 9.10. Size:219K  inchange semiconductor
 2n6032.pdf

isc Silicon NPN Power Transistor 2N6032 DESCRIPTION Collector-Emitter Breakdown Voltage- V =90V(Min) (BR)CEO Minimum Lot-to-Lot variations for robust device Performance and reliable operation APPLICATIONS Power amplifier and switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25 ) UNI SYMBOL PARAMETER VALUE T V Collector-Base Voltage 120 V CBO V Collector-Emitter Voltage

 9.11. Size:117K  inchange semiconductor
 2n6031.pdf

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2N6031 DESCRIPTION With TO-3 package Complement to type 2N5631 High collector sustaining voltage High DC current gain Low collector saturation voltage APPLICATIONS For high power audio amplifier and high voltage switching regulator circuits applications PINNING PIN DESCRIPTION 1 Bas

 9.12. Size:199K  inchange semiconductor
 2n6039.pdf

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor 2N6039 DESCRIPTION Collector Emitter Sustaining Voltage- VCEO(SUS)= 80V(Min) High DC Current Gain- hFE = 750(Min)@IC= 2A Complement to Type 2N6036 APPLICATIONS Designed for general purpose switching and amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMBO

 9.13. Size:121K  inchange semiconductor
 2n6037 2n6038 2n6039.pdf

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N6037 2N6038 2N6039 DESCRIPTION With TO-126 package Complement to type 2N6034/6035/6036 DARLINGTON High DC current gain APPLICATIONS Designed for general-purpose amplifier and low-speed switching applications PINNING(see Fig.2) PIN DESCRIPTION 1 Emitter 2 Collector 3 Base Absolute ma

 9.14. Size:219K  inchange semiconductor
 2n6033.pdf

isc Silicon NPN Power Transistor 2N6033 DESCRIPTION Collector-Emitter Breakdown Voltage- V =-120V(Min) (BR)CEO Minimum Lot-to-Lot variations for robust device Performance and reliable operation APPLICATIONS Power amplifier and switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25 ) UNI SYMBOL PARAMETER VALUE T V Collector-Base Voltage 150 V CBO V Collector-Emitter Volta