KRX212U
. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: KRX212U
Material: Si
Polaridad de transistor: Pre-Biased-NPN
Resistencia de Entrada Base R1 = 10 kOhm
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.2
W
Tensión colector-emisor (Vce): 50(12)
V
Corriente del colector DC máxima (Ic): 0.1(0.5)
A
Temperatura operativa máxima (Tj): 150
°C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 320(250)
MHz
Capacitancia de salida (Cc): 7.5
pF
Ganancia de corriente contínua (hfe): 20(270)
Paquete / Cubierta:
US6
Búsqueda de reemplazo de transistor bipolar KRX212U
KRX212U
Datasheet (PDF)
..1. Size:90K kec
krx212u.pdf 
KRX212USEMICONDUCTORTECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORSWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION.BFEATURESB1 Including two devices in US6.DIM MILLIMETERS1 6_(Ultra Super mini type with 6 leads.) A 2.00 + 0.20_+2 5 A1 1.3 0.1 With Built-in bias resistors. _B 2.1 + 0.13 4 D _B1 1.25 0.1+ Simplify circuit design.
9.1. Size:91K kec
krx214u.pdf
KRX214USEMICONDUCTORTECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORSWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION.BFEATURESB1 Including two devices in US6.DIM MILLIMETERS1 6_(Ultra Super mini type with 6 leads.) A 2.00 + 0.20_+2 5 A1 1.3 0.1 With Built-in bias resistors. _B 2.1 + 0.13 4 D _B1 1.25 0.1+ Simplify circuit design.
9.2. Size:47K kec
krx210e.pdf
KRX210ESEMICONDUCTORTECHNICAL DATA EPITAXIAL PLANAR NPN/PNP TRANSISTORSWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. BB1FEATURESIncluding two devices in TES6.1 6 DIM MILLIMETERSWith Built-in bias resistors. _A 1.6 + 0.05_A1 1.0 + 0.05Simplify circuit design. 52_B 1.6 + 0.05_B1 1.2 + 0.05Reduce a quantity of parts and manufacturing
9.3. Size:378K kec
krx210t.pdf
KRX210TSEMICONDUCTORTECHNICAL DATA EPITAXIAL PLANAR NPN/PNP TRANSISTORSWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION.EK B KFEATURESDIM MILLIMETERS_Including two devices in TS6. A 2.9 + 0.216B 1.6+0.2/-0.1With Built-in bias resistors. _C 0.70 + 0.052 5_+D 0.4 0.1Simplify circuit design. E 2.8+0.2/-0.3_Reduce a quantit
9.4. Size:91K kec
krx211u.pdf
KRX211USEMICONDUCTORTECHNICAL DATA EPITAXIAL PLANAR PNP/NPN TRANSISTORSWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION.BFEATURESB1 Including two devices in US6.DIM MILLIMETERS1 6_(Ultra Super mini type with 6 leads.) A 2.00 + 0.20_+2 5 A1 1.3 0.1 With Built-in bias resistors. _B 2.1 + 0.13 4 D _B1 1.25 0.1+ Simplify circuit desi
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