KRC234S Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: KRC234S
Código: NNA
Material: Si
Polaridad de transistor: Pre-Biased-NPN
Resistencia de Entrada Base R1 = 4.7 kOhm
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.2 W
Tensión colector-base (Vcb): 30 V
Tensión colector-emisor (Vce): 15 V
Tensión emisor-base (Veb): 5 V
Corriente del colector DC máxima (Ic): 0.6 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (fT): 200 MHz
Ganancia de corriente contínua (hFE): 200
Encapsulados: SOT-23
Búsqueda de reemplazo de KRC234S
- Selecciónⓘ de transistores por parámetros
KRC234S datasheet
krc231m-krc235m.pdf
SEMICONDUCTOR KRC231M KRC235M TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR SWITCHING APPLICATION. AUDIO MUTING APPLICATION. INTERFACE CIRCUIT AND DRIVER B CIRCUIT APPLICATION. DIM MILLIMETERS O FEATURES A 3.20 MAX H M B 4.30 MAX With Built-in Bias Resistors. C 0.55 MAX _ Simplify Circuit Design. D 2.40 + 0.15 E 1.27 Reduce a Quantity of Parts and Manufacturing Process.
krc231m-krc235m 1.pdf
SEMICONDUCTOR KRC231M KRC235M TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR SWITCHING APPLICATION. AUDIO MUTING APPLICATION. INTERFACE CIRCUIT AND DRIVER B CIRCUIT APPLICATION. DIM MILLIMETERS O FEATURES A 3.20 MAX H M B 4.30 MAX With Built-in Bias Resistors. C 0.55 MAX _ Simplify Circuit Design. D 2.40 + 0.15 E 1.27 Reduce a Quantity of Parts and Manufacturing Proces
krc231s-krc235s.pdf
SEMICONDUCTOR KRC231S KRC235S TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR SWITCHING APPLICATION. AUDIO MUTING APPLICATION. INTERFACE CIRCUIT AND DRIVER E L B L CIRCUIT APPLICATION. DIM MILLIMETERS _ + A 2.93 0.20 B 1.30+0.20/-0.15 FEATURES C 1.30 MAX 2 3 D 0.40+0.15/-0.05 With Built-in Bias Resistors. E 2.40+0.30/-0.20 1 G 1.90 Simplify Circuit Design. H 0.95 R
krc231s.pdf
SMD Type Transistors NPN Transistors KRC231S KRC235S SOT-23 Unit mm +0.1 2.9 -0.1 +0.1 0.4 -0.1 3 Features With Built-in Bias Resistors. C Simplify Circuit Design. 1 2 +0.1 +0.05 0.95-0.1 0.1-0.01 R 1 +0.1 1.9-0.1 B 1.Base 2.Emitter E 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 30 C
Otros transistores... KTX214U, KTX215U, KRC231M, KRC231S, KRC232M, KRC232S, KRC233M, KRC233S, BD222, KRC235M, KRC235S, KRC281M, KRC281S, KRC281U, KRC282M, KRC282S, KRC282U
History: 2SC4370AP
🌐 : EN ES РУ
Liste
Recientemente añadidas las descripciónes de los transistores:
BJT: GA1A4M | SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550
Popular searches
60n60 | 2n5485 equivalent | 2sa1941 | 2sc485 | 2sd287 | 2sd438 | a1492 | hy4008




