2N6042 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2N6042
Material: Si
Polaridad de transistor: PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 75 W
Tensión colector-base (Vcb): 100 V
Tensión colector-emisor (Vce): 100 V
Tensión emisor-base (Veb): 5 V
Corriente del colector DC máxima (Ic): 8 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 4 MHz
Capacitancia de salida (Cc): 300 pF
Ganancia de corriente contínua (hfe): 1200
Paquete / Cubierta: TO220AB
Búsqueda de reemplazo de transistor bipolar 2N6042
2N6042 Datasheet (PDF)
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Order this documentMOTOROLAby 2N6040/DSEMICONDUCTOR TECHNICAL DATAPNPPlastic Medium-Power2N6040Complementary SiliconTransistorsthru. . . designed for generalpurpose amplifier and lowspeed switching applications.*2N6042 High DC Current Gain NPNhFE = 2500 (Typ) @ IC = 4.0 Adc CollectorEmitter Sustaining Voltage @ 100 mAdc 2N6043VCEO(sus
2n6040g 2n6042g 2n6043g 2n6045g.pdf
PNP - 2N6040, 2N6042,NPN - 2N6043, 2N6045Plastic Medium-PowerComplementary SiliconTransistorswww.onsemi.comPlastic medium-power complementary silicon transistors aredesigned for general-purpose amplifier and low-speed switchingDARLINGTON, 8 AMPERESapplications.COMPLEMENTARY SILICONFeaturesPOWER TRANSISTORS High DC Current Gain - hFE = 2500 (Typ) @ IC = 4.0 Adc60 -
2n6042g.pdf
PNP - 2N6040, 2N6042,NPN - 2N6043, 2N60452N6043 and 2N6045 are Preferred DevicesPlastic Medium-PowerComplementary SiliconTransistorsPlastic medium-power complementary silicon transistors aredesigned for general-purpose amplifier and low-speed switchingDARLINGTON, 8 AMPERESapplications.COMPLEMENTARY SILICONFeaturesPOWER TRANSISTORS High DC Current Gain - hFE = 2500 (
2n6043g 2n6043g 2n6042g.pdf
PNP - 2N6040, 2N6042,NPN - 2N6043, 2N60452N6043 and 2N6045 are Preferred DevicesPlastic Medium-PowerComplementary SiliconTransistorsPlastic medium-power complementary silicon transistors aredesigned for general-purpose amplifier and low-speed switchingDARLINGTON, 8 AMPERESapplications.COMPLEMENTARY SILICONFeaturesPOWER TRANSISTORS High DC Current Gain - hFE = 2500 (
Otros transistores... 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , 2SA1837 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .
Liste
Recientemente añadidas las descripciónes de los transistores:
BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050