KRA224S Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: KRA224S

Código: PT

Material: Si

Polaridad de transistor: Pre-Biased-PNP

Resistencia de Entrada Base R1 = 10 kOhm

Resistencia Base-Emisor R2 = 10 kOhm

Ratio típica de resistencia R1/R2 = 1

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.2 W

Tensión colector-emisor (Vce): 50 V

Corriente del colector DC máxima (Ic): 0.8 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 200 MHz

Ganancia de corriente contínua (hFE): 56

Encapsulados: SOT-23

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KRA224S datasheet

 9.1. Size:76K  kec
 kra221m-kra226m.pdf pdf_icon

KRA224S

SEMICONDUCTOR KRA221M KRA226M TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR HIGH CURRENT SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. B FEATURES With Built-in Bias Resistors. DIM MILLIMETERS O Simplify Circuit Design. A 3.20 MAX H M B 4.30 MAX Reduce a Quantity of Parts and Manufacturing Process. C 0.55 MAX _ D 2.40 + 0.15 High Output Current -8

 9.2. Size:382K  kec
 kra222s-kra226s.pdf pdf_icon

KRA224S

SEMICONDUCTOR KRA222S KRA226S TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR HIGH CURRENT SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. FEATURES E With Built-in Bias Resistors. L B L DIM MILLIMETERS Simplify Circuit Design. _ + A 2.93 0.20 B 1.30+0.20/-0.15 Reduce a Quantity of Parts and Manufacturing Process. C 1.30 MAX 2 High Output Curren

 9.3. Size:417K  kec
 kra221m-kra226m 1.pdf pdf_icon

KRA224S

SEMICONDUCTOR KRA221M KRA226M TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR HIGH CURRENT SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. B FEATURES With Built-in Bias Resistors. DIM MILLIMETERS O Simplify Circuit Design. A 3.20 MAX H M B 4.30 MAX Reduce a Quantity of Parts and Manufacturing Process. C 0.55 MAX High Output Current -800mA. _ D

 9.4. Size:65K  kec
 kra221-kra226.pdf pdf_icon

KRA224S

SEMICONDUCTOR KRA221 KRA226 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR HIGH CURRENT SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. B C FEATURES With Built-in Bias Resistors. Simplify Circuit Design. Reduce a Quantity of Parts and Manufacturing Process. N DIM MILLIMETERS A 4.70 MAX E K High Output Current -800mA. B 4.80 MAX G C 3.70 MAX

MOSTRAR MÁS

Otros transistores... KRC285U, KRC286M, KRC286S, KRC286U, KRA221M, KRA221S, KRA222S, KRA223S, TIP42C, KRA225S, KRA226S, KRC241M, KRC241S, KRC242S, KRC243S, KRC244M, KRC244S