KRC241S Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: KRC241S

Código: NQ

Material: Si

Polaridad de transistor: Pre-Biased-NPN

Resistencia de Entrada Base R1 = 1 kOhm

Resistencia Base-Emisor R2 = 1 kOhm

Ratio típica de resistencia R1/R2 = 1

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.2 W

Tensión colector-emisor (Vce): 50 V

Corriente del colector DC máxima (Ic): 0.8 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 200 MHz

Ganancia de corriente contínua (hFE): 33

Encapsulados: SOT-23

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KRC241S datasheet

 0.1. Size:418K  kec
 krc241s-krc246s 1.pdf pdf_icon

KRC241S

SEMICONDUCTOR KRC241S KRC246S TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR HIGH CURRENT SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. E L B L FEATURES DIM MILLIMETERS _ + With Built-in Bias Resistors. A 2.93 0.20 B 1.30+0.20/-0.15 Simplify Circuit Design. C 1.30 MAX 2 3 D 0.40+0.15/-0.05 Reduce a Quantity of Parts and Manufacturing Process.

 0.2. Size:384K  kec
 krc241s-krc246s.pdf pdf_icon

KRC241S

SEMICONDUCTOR KRC241S KRC246S TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR HIGH CURRENT SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. E L B L FEATURES DIM MILLIMETERS _ + With Built-in Bias Resistors. A 2.93 0.20 B 1.30+0.20/-0.15 Simplify Circuit Design. C 1.30 MAX 2 3 D 0.40+0.15/-0.05 Reduce a Quantity of Parts and Manufacturing Process.

 8.1. Size:65K  kec
 krc241-krc246.pdf pdf_icon

KRC241S

SEMICONDUCTOR KRC241 KRC246 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR HIGH CURRENT SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. B C FEATURES With Built-in Bias Resistors. Simplify Circuit Design. Reduce a Quantity of Parts and Manufacturing Process. N DIM MILLIMETERS A 4.70 MAX High Output Current 800mA. E K B 4.80 MAX G C 3.70 MAX D

 8.2. Size:109K  kec
 krc241m-krc246m 1.pdf pdf_icon

KRC241S

SEMICONDUCTOR KRC241M KRC246M TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR HIGH CURRENT SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. B FEATURES With Built-in Bias Resistors. Simplify Circuit Design. DIM MILLIMETERS O A 3.20 MAX Reduce a Quantity of Parts and Manufacturing Process. H M B 4.30 MAX C 0.55 MAX High Output Current 800mA. _ D 2.4

MOSTRAR MÁS

Otros transistores... KRA221M, KRA221S, KRA222S, KRA223S, KRA224S, KRA225S, KRA226S, KRC241M, TIP31C, KRC242S, KRC243S, KRC244M, KRC244S, KRC245S, KRC246S, 2SC5523, 2SC5521