KRA119S Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: KRA119S

Código: P6

Material: Si

Polaridad de transistor: Pre-Biased-PNP

Resistencia de Entrada Base R1 = 4.7 kOhm

Resistencia Base-Emisor R2 = 10 kOhm

Ratio típica de resistencia R1/R2 = 0.47

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.2 W

Tensión colector-base (Vcb): 50 V

Corriente del colector DC máxima (Ic): 0.15 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 250 MHz

Ganancia de corriente contínua (hFE): 30

Encapsulados: SOT-23

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KRA119S datasheet

 ..1. Size:351K  kec
 kra119s.pdf pdf_icon

KRA119S

SEMICONDUCTOR KRA119S TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION E FEATURES L B L With Built-in Bias Resistors. DIM MILLIMETERS _ + A 2.93 0.20 Simplify Circuit Design. B 1.30+0.20/-0.15 C 1.30 MAX Reduce a Quantity of Parts and Manufacturing Process. 2 3 D 0.40+0.15/-0.05 E 2.40+0.30/-0.20 1 G

 9.1. Size:405K  kec
 kra116-kra122.pdf pdf_icon

KRA119S

SEMICONDUCTOR KRA116 KRA122 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION B C FEATURES With Built-in Bias Resistors. Simplify Circuit Design. Reduce a Quantity of Parts and Manufacturing Process. N DIM MILLIMETERS A 4.70 MAX E K B 4.80 MAX G C 3.70 MAX D D 0.45 E 1.00 F 1.27 G 0.85 H 0.45 _ H

 9.2. Size:69K  kec
 kra116s-kra122s.pdf pdf_icon

KRA119S

SEMICONDUCTOR KRA116S KRA122S TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION E L B L FEATURES DIM MILLIMETERS _ + 2.93 0.20 With Built-in Bias Resistors. A B 1.30+0.20/-0.15 Simplify Circuit Design. C 1.30 MAX 2 3 D 0.45+0.15/-0.05 Reduce a Quantity of Parts and Manufacturing Process. E 2.40+0.30/-0.20 1

 9.3. Size:75K  kec
 kra116m-kra122m.pdf pdf_icon

KRA119S

SEMICONDUCTOR KRA116M KRA122M TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION B FEATURES With Built-in Bias Resistors. DIM MILLIMETERS O Simplify Circuit Design. A 3.20 MAX H M B 4.30 MAX Reduce a Quantity of Parts and Manufacturing Process. C 0.55 MAX _ D 2.40 + 0.15 E 1.27 F 2.30 C _ + G 14.00 0.50 H

MOSTRAR MÁS

Otros transistores... KRC164F, KRC234M, KTC3552T, KTC3571S, KTC3572, KRA110M, KRA111M, KRA114M, BC549, KRA160F, KRA161F, KRA163F, KRA164F, KRC119S, KTA1571S, KTA1572, KRA101