KRC246M . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: KRC246M
Material: Si
Polaridad de transistor: Pre-Biased-NPN
Resistencia de Entrada Base R1 = 2.2 kOhm
Resistencia Base-Emisor R2 = 10 kOhm
Ratio típica de resistencia R1/R2 = 0.22
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.4 W
Tensión colector-emisor (Vce): 50 V
Corriente del colector DC máxima (Ic): 0.8 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 200 MHz
Ganancia de corriente contínua (hfe): 56
Paquete / Cubierta: TO-92M
Búsqueda de reemplazo de transistor bipolar KRC246M
KRC246M Datasheet (PDF)
krc241m-krc246m 1.pdf
SEMICONDUCTOR KRC241M~KRC246MTECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORHIGH CURRENT SWITCHING APPLICATION.INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. BFEATURES With Built-in Bias Resistors. Simplify Circuit Design.DIM MILLIMETERSOA 3.20 MAX Reduce a Quantity of Parts and Manufacturing Process.HM B 4.30 MAXC 0.55 MAX High Output Current : 800mA._D 2.4
krc241m-krc246m.pdf
SEMICONDUCTOR KRC241M~KRC246MTECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORHIGH CURRENT SWITCHING APPLICATION.INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. BFEATURES With Built-in Bias Resistors.Simplify Circuit Design.DIM MILLIMETERSOA 3.20 MAXReduce a Quantity of Parts and Manufacturing Process.HM B 4.30 MAXC 0.55 MAXHigh Output Current : 800mA._D
krc241-krc246.pdf
SEMICONDUCTOR KRC241~KRC246TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORHIGH CURRENT SWITCHING APPLICATION.INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. B CFEATURES With Built-in Bias Resistors.Simplify Circuit Design.Reduce a Quantity of Parts and Manufacturing Process.N DIM MILLIMETERSA 4.70 MAXHigh Output Current : 800mA. EKB 4.80 MAXGC 3.70 MAXD
krc241s-krc246s 1.pdf
SEMICONDUCTOR KRC241S~KRC246STECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORHIGH CURRENT SWITCHING APPLICATION.INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. EL B LFEATURES DIM MILLIMETERS_+With Built-in Bias Resistors. A 2.93 0.20B 1.30+0.20/-0.15Simplify Circuit Design.C 1.30 MAX23 D 0.40+0.15/-0.05Reduce a Quantity of Parts and Manufacturing Process.
krc241s-krc246s.pdf
SEMICONDUCTOR KRC241S~KRC246STECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORHIGH CURRENT SWITCHING APPLICATION.INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. EL B LFEATURES DIM MILLIMETERS_+With Built-in Bias Resistors. A 2.93 0.20B 1.30+0.20/-0.15Simplify Circuit Design.C 1.30 MAX23 D 0.40+0.15/-0.05Reduce a Quantity of Parts and Manufacturing Process.
Otros transistores... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
Liste
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