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2SA1036KRLT1 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: 2SA1036KRLT1
   Material: Si
   Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 0.2 W
   Tensión colector-base (Vcb): 40 V
   Tensión colector-emisor (Vce): 32 V
   Tensión emisor-base (Veb): 5 V
   Corriente del colector DC máxima (Ic): 0.5 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 200 MHz
   Capacitancia de salida (Cc): 7 pF
   Ganancia de corriente contínua (hfe): 180
   Paquete / Cubierta: SOT-23

 Búsqueda de reemplazo de transistor bipolar 2SA1036KRLT1

 

2SA1036KRLT1 Datasheet (PDF)

 0.1. Size:167K  lrc
l2sa1036kqlt1g l2sa1036krlt1g.pdf

2SA1036KRLT1
2SA1036KRLT1

LESHAN RADIO COMPANY, LTD.Medium Power Transistor(*32V, *0.5A)L2SA1036KQLT1G SeriesL2SA1036KQLT1G SeriesS-L2SA1036KQLT1G SeriesFFeatures1) Large IC.ICMax. = *500mA2) Low VCE(sat). Ideal for low-voltage3operation.3) We declare that the material of product compliance with RoHS requirements.14)S- Prefix for Automotive and Other Applications Requiring Unique Site2a

 0.2. Size:167K  lrc
l2sa1036krlt1g.pdf

2SA1036KRLT1
2SA1036KRLT1

LESHAN RADIO COMPANY, LTD.Medium Power Transistor(*32V, *0.5A)L2SA1036KQLT1G SeriesL2SA1036KQLT1G SeriesS-L2SA1036KQLT1G SeriesFFeatures1) Large IC.ICMax. = *500mA2) Low VCE(sat). Ideal for low-voltage3operation.3) We declare that the material of product compliance with RoHS requirements.14)S- Prefix for Automotive and Other Applications Requiring Unique Site2a

 6.1. Size:1513K  rohm
2sa1036k.pdf

2SA1036KRLT1
2SA1036KRLT1

2SA1036KDatasheetMedium Power Transistor (-32V,-500mA)lOutlinelParameter Value SMT3VCEO-32VIC-500mASOT-346SC-59 lFeaturesl1)Large IC.lInner circuitl ICMAX=-500mA2)Low VCE(sat). Ideal for low-voltage operating.3)Complements the 2SC2411K.lApplicationlGENERAL PURPOSE SMALL SIG

 6.2. Size:101K  rohm
2sa1036k 2sa1577 2sa854s 2sa854 2sa1036k 2sa1577.pdf

2SA1036KRLT1
2SA1036KRLT1

TransistorsMedium Power Transistor(*32V, *0.5A)2SA1036K / 2SA1577 / 2SA854SFFeatures FExternal dimensions (Units: mm)1) Large IC.ICMax. = *500mA2) Low VCE(sat). Ideal for low-voltageoperation.3) Complements the 2SC2411K /2SC1741S / 2SC4097.FStructureEpitaxial planar typePNP silicon transistor(96-86-B11)204Transistors 2SA1036K / 2SA1577 / 2SA854SFAbsolute maxim

 6.3. Size:1219K  rohm
2sa1036kfra.pdf

2SA1036KRLT1
2SA1036KRLT1

2SA1036K FRADatasheetMedium Power Transistor (-32V,-500mA)AEC-Q101 QualifiedlOutlinel SOT-346 Parameter Value SC-59 VCEO-32VIC-500mASMT3lFeatures lInner circuitl l1) High IC(=500mA) on small package.2)Low VCE(sat). Ideal for low-voltage operating.3)Complements the 2SC2411K FRA.lApplicationlGENERAL PURPOSE SM

 6.4. Size:225K  lge
2sa1036k.pdf

2SA1036KRLT1
2SA1036KRLT1

2SA1036K SOT-23-3L Transistor(PNP)SOT-23-3L1. BASE 2.922. EMITTER 0.351.173. COLLECTOR Features2.80 1.60 Large IC. IC= -500 mA Low VCE(sat). Ideal for low-voltage operation. 0.151.90MARKING : HP, HQ, HR Dimensions in inches and (millimeters)MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltage -40 V VC

 6.5. Size:210K  wietron
2sa1036k.pdf

2SA1036KRLT1
2SA1036KRLT1

2SA1036KPNP General Purpose Transistors31P b Lead(Pb)-Free2SOT-23MAXIMUM RATINGS(Ta=25C)Rating Symbol Value UnitCollector-Emitter VoltageVCEO-32 VVCBOCollector-Base Voltage -40 VVEBOEmitter-Base Voltage -5.0 VICCollector Current - Continuous -500* mATotal Device DissipationPD0.2 mWTA=25CTj CJunction Temperature +150TstgStorage Temperature

 6.6. Size:329K  willas
2sa1036kxlt1.pdf

2SA1036KRLT1
2SA1036KRLT1

FM120-M WILLAS2SA1036KxLT1THRU(*32V, *0.5A)Medium Power TransistorFM1200-M1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200VSOD-123 PACKAGE Pb Free ProducPackage outlineFeatures Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance.SOD-123H Low profile surface mounted application in order to

 6.7. Size:165K  lrc
l2sa1036kplt1g.pdf

2SA1036KRLT1
2SA1036KRLT1

LESHAN RADIO COMPANY, LTD.Medium Power Transistor(*32V, *0.5A)L2SA1036KQLT1G SeriesL2SA1036KQLT1G SeriesS-L2SA1036KQLT1G SeriesFFeatures1) Large IC.ICMax. = *500mA2) Low VCE(sat). Ideal for low-voltage3operation.3) We declare that the material of product compliance with RoHS requirements.14)S- Prefix for Automotive and Other Applications Requiring Unique Site2a

 6.8. Size:165K  lrc
l2sa1036kqlt1g.pdf

2SA1036KRLT1
2SA1036KRLT1

LESHAN RADIO COMPANY, LTD.Medium Power Transistor(*32V, *0.5A)L2SA1036KQLT1G SeriesL2SA1036KQLT1G SeriesS-L2SA1036KQLT1G SeriesFFeatures1) Large IC.ICMax. = *500mA2) Low VCE(sat). Ideal for low-voltage3operation.3) We declare that the material of product compliance with RoHS requirements.14)S- Prefix for Automotive and Other Applications Requiring Unique Site2a

 6.9. Size:95K  chenmko
2sa1036kgp.pdf

2SA1036KRLT1
2SA1036KRLT1

CHENMKO ENTERPRISE CO.,LTD2SA1036KGPSURFACE MOUNT Medium Power PNP Transistor VOLTAGE 32 Volts CURRENT 0.5 AmpereAPPLICATION* Medium Power Amplifier .FEATURE* Surface mount package. (SOT-23)SOT-23* Low saturation voltage VCE(sat)=-0.4V(max.)(IC=-100mA) * Low cob. Cob=7.0pF(Typ.)* PC= 200mW (mounted on ceramic substrate).* High saturation current capability.(1)(3)

 6.10. Size:1454K  cn shikues
2sa1036k.pdf

2SA1036KRLT1
2SA1036KRLT1

KKKKK

Otros transistores... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

 

 
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