2SC1623SLT1 Todos los transistores

 

2SC1623SLT1 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2SC1623SLT1

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.3 W

Tensión colector-base (Vcb): 60 V

Tensión colector-emisor (Vce): 50 V

Tensión emisor-base (Veb): 7 V

Corriente del colector DC máxima (Ic): 0.15 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Producto de corriente -- ganancia — ancho de banda (ft): 180 MHz

Capacitancia de salida (Cc): 3 pF

Ganancia de corriente contínua (hfe): 270

Empaquetado / Estuche: SOT-23

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2SC1623SLT1 Datasheet (PDF)

0.1. l2sc1623slt1g.pdf Size:280K _lrc

2SC1623SLT1
2SC1623SLT1

LESHAN RADIO COMPANY, LTD.L2SC1623QLT1GGeneral Purpose TransistorsSeriesPb-Free package is availableS- Prefix for Automotive and Other Applications Requiring Unique Site S-L2SC1623QLT1Gand Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.SeriesDEVICE MARKING AND ORDERING INFORMATION3Device Marking Shipping L2SC1623QLT1GL5 3000/Tape&Reel S-L2SC1623QLT1

6.1. l2sc1623swt1g.pdf Size:308K _lrc

2SC1623SLT1
2SC1623SLT1

LESHAN RADIO COMPANY, LTD.General Purpose TransistorsPb-Free packkage is availableL2SC1623SWT1GDEVICE MARKING AND ORDERING INFORMATIONDevice Marking Shipping3L2SC1623SWT1G L7 3000/Tape&Reel10000/Tape&ReelL2SC1623SWT3G L712MAXIMUM RATINGSSC-70Rating Symbol Value UnitCollector-Emitter Voltage VCEO 50 VCollector-Base Voltage VCBO 60 V 3COLLECTOREmitter-Base Volt

 7.1. 2sc1623.pdf Size:60K _nec

2SC1623SLT1
2SC1623SLT1

DATA SHEETSILICON TRANSISTOR2SC1623AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIERNPN SILICON EPITAXIAL TRANSISTORMINI MOLDFEATURESPACKAGE DIMENSIONS High DC Current Gain: hFE = 200 TYP.in millimeters(VCE = 6.0 V, IC = 1.0 mA)2.8 0.2 High Voltage: VCEO = 50 V1.5 0.65+0.10.15ABSOLUTE MAXIMUM RATINGSMaximum Voltages and Current (TA = 25 C)2Collector to

7.2. 2sc1623-l5-l6-l7.pdf Size:326K _mcc

2SC1623SLT1
2SC1623SLT1

2SC1623-L5MCCMicro Commercial ComponentsTM2SC1623-L620736 Marilla Street ChatsworthMicro Commercial ComponentsCA 913112SC1623-L7Phone: (818) 701-4933Fax: (818) 701-4939Features Halogen free available upon request by adding suffix "-HF" Lead Free Finish/RoHS Compliant ("P" Suffix designates NPN SiliconRoHS Compliant. See ordering information) High DC Cu

 7.3. 2sc1623k.pdf Size:492K _secos

2SC1623SLT1
2SC1623SLT1

2SC1623K 0.1A , 60V NPN Epitaxial Planar Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free SOT-23 FEATURE High DC current gain :hFE=200(Typ), VCE=6V, IC=1mA. AL High Voltage:VCEO=50V. 33Top ViewC BCLASSIFICATION OF hFE 11 22K EProduct-Rank 2SC1623K-P 2SC1623K-Y 2SC1623K-G 2SC1623K-B Range 90~

7.4. 2sc1623.pdf Size:273K _gsme

2SC1623SLT1
2SC1623SLT1

Guilin Strong Micro-Electronics Co.,Ltd.Guilin Strong Micro-Electronics Co.,Ltd.Guilin Strong Micro-Electronics Co.,Ltd.GM1623MAXIMUM RATINGSMAXIMUM RATINGS MAXIMUM RATINGSCharacteristic Symbol Rating Unit Collector-Emitter VoltageVCEO 50 Vdc-C

 7.5. 2sc1623 sot-23.pdf Size:224K _lge

2SC1623SLT1
2SC1623SLT1

2SC1623 SOT-23 Transistor(NPN)SOT-231. BASE 2. EMITTER 3. COLLECTOR Features High DC current gain :hFE=200(Typ)VCE=6V, IC=1mA High voltage:VCEO=50V MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO 60 VCollector-Base Voltage Dimensions in inches and (millimeters)50 VVCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage 5 VI

7.6. 2sc1623.pdf Size:204K _wietron

2SC1623SLT1
2SC1623SLT1

2SC1623NPN General Purpose Transistors31P b Lead(Pb)-Free2SOT-23MAXIMUM RATINGS(Ta=25C)Rating Symbol Value UnitCollector-Emitter VoltageVCEO50 VVCBOCollector-Base Voltage 60 VVEBOEmitter-Base Voltage 7 VICCollector Current - Continuous 150 mATotal Device Dissipation FR-5 BoardPD225 mWTA=25C1.8 mW/CDerate above 25CRJAThermal Resistance,

7.7. 2sc1623xlt1.pdf Size:373K _willas

2SC1623SLT1
2SC1623SLT1

FM120-M WILLAS 2SC1623xLT1THRUGeneral Purpose TransistorsFM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200VSOD-123 PACKAGE Pb Free ProductPackage outlineFeatures Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance.SOD-123H Low profile surface mounted application in order to optimize b

7.8. 2sc1623.pdf Size:258K _shenzhen

2SC1623SLT1
2SC1623SLT1

Shenzhen Tuofeng Semiconductor Technology Co., Ltd SOT-23 Plastic-Encapsulate TransistorsSOT-23 2SC1623 TRANSISTOR (NPN) FEATURES 1. BASE High DC current gain :hFE=200(Typ)VCE=6V, IC=1mA 2. EMITTER High voltage:VCEO=50V 3. COLLECTOR MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO 60 VCollector-Base Voltage 50 VVCEO Collector

7.9. 2sc1623 sot-23.pdf Size:284K _can-sheng

2SC1623SLT1
2SC1623SLT1

ShenZhen CanSheng Industry Development Co.,Ltd. www.szcansheng.com SOT-23 Plastic-Encapsulate Transistors 2SC1623 TRANSISTOR (NPN) FEATURES High voltage:Vceo=50V MARKING:L6 MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base V

7.10. 2sc1623t.pdf Size:1530K _blue-rocket-elect

2SC1623SLT1
2SC1623SLT1

2SC1623T(BR3DG1623T) Rev.C Feb.-2015 DATA SHEET / Descriptions SOT-89 NPN Silicon NPN transistor in a SOT-89 Plastic Package. / Features h , V 2SA812T(BR3CG812T)FE CEO,High hFE and VCEO, complementary pair with 2SA812T(BR3CG812T). / Applications Audio frequency general amp

7.11. 2sc1623w.pdf Size:1122K _blue-rocket-elect

2SC1623SLT1
2SC1623SLT1

2SC1623W(BR3DG1623W) Rev.C Feb.-2015 DATA SHEET / Descriptions SOT-323 NPN Silicon NPN transistor in a SOT-323 Plastic Package. / Features h , V 2SA812W(BR3CG812W)FE CEO,High hFE and VCEO, complementary pair with 2SA812W(BR3CG812W). / Applications Audio frequency general a

7.12. l2sc1623rlt1g.pdf Size:282K _lrc

2SC1623SLT1
2SC1623SLT1

LESHAN RADIO COMPANY, LTD.General Purpose TransistorsL2SC1623QLT1GPb-Free package is availableS- Prefix for Automotive and Other Applications Requiring Unique Site Seriesand Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.S-L2SC1623QLT1GSeriesDEVICE MARKING AND ORDERING INFORMATION3Device Marking Shipping L2SC1623QLT1GL5 3000/Tape&Reel S-L2SC1623QLT1G

7.13. l2sc1623qlt1g.pdf Size:318K _lrc

2SC1623SLT1
2SC1623SLT1

LESHAN RADIO COMPANY, LTD.General Purpose TransistorsL2SC1623QLT1GPb-Free package is availableS- Prefix for Automotive and Other Applications Requiring Unique Site Seriesand Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.S-L2SC1623QLT1GSeriesDEVICE MARKING AND ORDERING INFORMATION3Device Marking Shipping L2SC1623QLT1GL5 3000/Tape&ReelS-L2SC1623QLT1G

7.14. 2sc1623.pdf Size:1128K _kexin

2SC1623SLT1
2SC1623SLT1

SMD Type TransistorsNPN Transistors2SC1623SOT-23Unit: mm2.9+0.1-0.1+0.10.4 -0.13FeaturesHigh DC Current Gain:hFE = 200 TYP.1 2+0.1+0.05VCE = 6.0 V, IC = 1.0 mA 0.95 -0.1 0.1 -0.01+0.11.9 -0.1High Voltage:VCE O = 50 V1.Base2.Emitter3.collectorAbsolute Maximum Ratings Ta = 25Parameter Symbol Rating UnitCollector to base voltage VCBO 60 VCollec

7.15. 2sc1623.pdf Size:215K _inchange_semiconductor

2SC1623SLT1
2SC1623SLT1

INCHANGE Semiconductorisc Silicon NPN Transistor 2SC1623DESCRIPTIONSOT-23 plastic-encapsulate transistorsHigh DC current gain:h =200(TYP)FE@V = 6V, I = 1mACE CHigh voltageMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio frequency general purpose amplifierABSOLUTE MAXIMUM RATINGS(T =25)aSYMB

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