9014SLT1 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: 9014SLT1
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

   Disipación total del dispositivo (Pc): 0.3 W
   Tensión colector-base (Vcb): 50 V
   Tensión colector-emisor (Vce): 45 V
   Tensión emisor-base (Veb): 5 V
   Corriente del colector DC máxima (Ic): 0.1 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   Transición de frecuencia (ft): 300 MHz
   Ganancia de corriente contínua (hfe): 300
   Paquete / Cubierta: SOT-23

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9014SLT1 Datasheet (PDF)

..1. Size:305K willas
9014qlt1 9014rlt1 9014slt1 9014tlt1.pdf

FM120-M WILLAS9014xLT1THRUGeneral Purpose TransistorsFM1200-M1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200VSOD-123 PACKAGE Pb Free ProducPackage outlineFeatures Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance.SOD-123HNPN Silicon Low profile surface mounted application in order to o

0.1. Size:98K lrc
l9014qlt1g l9014rlt1g l9014slt1g l9014tlt1g.pdf

LESHAN RADIO COMPANY, LTD.General Purpose TransistorsNPN SiliconL9014QLT1GFEATURE Complementary to L9014.Series We declare that the material of product compliance with RoHS requirements. S-L9014QLT1G S- Prefix for Automotive and Other Applications Requiring Unique SiteSeriesand Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.DEVICE MARKING AND ORDERING INF

0.2. Size:98K lrc
l9014slt1g.pdf