MMBT2222ATT1 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: MMBT2222ATT1
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

   Disipación total del dispositivo (Pc): 0.15 W
   Tensión colector-base (Vcb): 75 V
   Tensión colector-emisor (Vce): 40 V
   Tensión emisor-base (Veb): 6 V
   Corriente del colector DC máxima (Ic): 0.6 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   Transición de frecuencia (ft): 300 MHz
   Capacitancia de salida (Cc): 8 pF
   Ganancia de corriente contínua (hfe): 100
   Paquete / Cubierta: SC-89

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MMBT2222ATT1 Datasheet (PDF)

..1. Size:357K willas
mmbt2222att1.pdf

FM120-M WILLASTHRUMMBT2222ATT1General Purpose T BARRIER RECTIFIERS -20V- 200VransistorFM1200-M 1.0A SURFACE MOUNT SCHOTTKYSOD-123 PACKAGE Pb Free ProductPackage outlineFeatures Batch process dNPN Siliconeesign, excellent power dissipation offers better reverse l akage current and thermal resistance.SOD-123H Low profile surface mounted application in order

0.1. Size:114K onsemi
mmbt2222att1-d.pdf

MMBT2222ATT1General Purpose TransistorNPN SiliconThese transistors are designed for general purpose amplifierapplications. They are housed in the SOT-416/SC-75 package whichis designed for low power surface mount applications.http://onsemi.comFeaturesCOLLECTOR3 These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliant1BASE2MAXIMUM RATINGS (TA = 25

0.2. Size:123K onsemi
mmbt2222att1g.pdf

MMBT2222ATT1G,NSVMMBT2222ATT1GGeneral Purpose TransistorNPN SiliconThese transistors are designed for general purpose amplifierhttp://onsemi.comapplications. They are housed in the SOT-416/SC-75 package whichis designed for low power surface mount applications.COLLECTOR3Features NSV Prefix for Automotive and Other Applications Requiring1Unique Site and Control Chang

0.3. Size:123K onsemi
nsvmmbt2222att1g.pdf