2N6058 Todos los transistores

 

2N6058 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2N6058

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 150 W

Tensión colector-base (Vcb): 80 V

Tensión colector-emisor (Vce): 80 V

Tensión emisor-base (Veb): 5 V

Corriente del colector DC máxima (Ic): 12 A

Temperatura operativa máxima (Tj): 200 °C

CARACTERÍSTICAS ELÉCTRICAS

Producto de corriente -- ganancia — ancho de banda (ft): 4 MHz

Capacitancia de salida (Cc): 300 pF

Ganancia de corriente contínua (hfe): 750

Empaquetado / Estuche: TO3

Búsqueda de reemplazo de transistor bipolar 2N6058

 

2N6058 Datasheet (PDF)

1.1. 2n6050 2n6051 2n6052 2n6057 2n6058 2n6059.pdf Size:275K _motorola

2N6058
2N6058

Order this document MOTOROLA by 2N6050/D SEMICONDUCTOR TECHNICAL DATA PNP 2N6050 Darlington Complementary thru Silicon Power Transistors . . . designed for generalpurpose amplifier and low frequency switching applications. 2N6052* High DC Current Gain NPN hFE = 3500 (Typ) @ IC = 5.0 Adc CollectorEmitter Sustaining Voltage @ 100 mA 2N6057 VCEO(sus) = 60 Vdc (Min) 2N6050,

1.2. 2n6050-2n6051-2n6052-2n6057-2n6058-2n6059.pdf Size:217K _comset

2N6058
2N6058

POWER COMPLEMENTARY POWER COMPLEMENTARY SILICON TRANSISTORS SILICON TRANSISTORS The 2N6050, 2N6051 and 2N6052 are silicon epitaxial-base PNP transistors in monolithic Darlington configuration mounted in Jedec TO-3 metal case. They are inteded for use in power linear and low frequency switching applications. The complementary NPN types are 2N6057, 2N6058 and 2N6059 respectively. ABS

 1.3. 2n6050 2n6051 2n6052 2n6057 2n6058 2n6059.pdf Size:195K _bocasemi

2N6058
2N6058

A Boca Semiconductor Corp. BSC A Boca Semiconductor Corp. BSC http://www.bocasemi.com A Boca Semiconductor Corp. BSC http://www.bocasemi.com A Boca Semiconductor Corp. BSC http://www.bocasemi.com

1.4. 2n6058 2n6059.pdf Size:109K _jmnic

2N6058
2N6058

Product Specification www.jmnic.com Silicon NPN Power Transistors 2N6058/2N6059 DESCRIPTION ·With TO-3 package ·High gain ·High current ·High dissipation ·Complement to type 2N5883/2N5884 APPLICATIONS ·They are intended for use in power linear and low frequency switching applications PINNING PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (T

 1.5. 2n6058 2n6059.pdf Size:131K _inchange_semiconductor

2N6058
2N6058

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N6058 2N6059 DESCRIPTION ·With TO-3 package ·High current ;high dissipation ·DARLINGTON ·Complement to type 2N5883;2N5884 APPLICATIONS ·They are intended for use in power linear and low frequency switching applications PINNING PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-3)

Otros transistores... 2N6050 , 2N6051 , 2N6052 , 2N6053 , 2N6054 , 2N6055 , 2N6056 , 2N6057 , S9012 , 2N6059 , 2N606 , 2N6060 , 2N6061 , 2N6062 , 2N6063 , 2N6064 , 2N6065 .

 
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