MMBT3906WT1 Todos los transistores

 ..1. Size:423K  motorola
 mmbt3904w mmbt3906wt1 mmbt3904 06.pdf

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA MMBT3904WT1/D General Purpose Transistors NPN NPN and PNP Silicon MMBT3904WT1 PNP These transistors are designed for general purpose amplifier applications. They are housed in the SOT 323/SC 70 which is designed for low power surface mount MMBT3906WT1 applications. MAXIMUM RATINGS Rating Symbol Value Unit GENERAL PURPO

 ..2. Size:297K  motorola
 mmbt3904wt1 mmbt3906wt1.pdf

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA MMBT3904WT1/D General Purpose Transistors NPN NPN and PNP Silicon MMBT3904WT1 PNP These transistors are designed for general purpose amplifier applications. They are housed in the SOT 323/SC 70 which is designed for low power surface mount MMBT3906WT1 applications. MAXIMUM RATINGS Rating Symbol Value Unit GENERAL PURPO

 ..3. Size:160K  onsemi
 mmbt3904wt1 mmbt3906wt1.pdf

MMBT3904WT1, NPN MMBT3906WT1, PNP General Purpose Transistors NPN and PNP Silicon http //onsemi.com These transistors are designed for general purpose amplifier COLLECTOR applications. They are housed in the SOT-323/SC-70 package which 3 is designed for low power surface mount applications. Features 1 These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS BASE Complian

 0.1. Size:128K  onsemi
 mmbt3904wt1g smmbt3904wt1g mmbt3906wt1g smmbt3906wt1g.pdf

MMBT3904WT1G, NPN, SMMBT3904WT1G, NPN, MMBT3906WT1G, PNP, SMMBT3906WT1G, PNP General Purpose www.onsemi.com Transistors NPN and PNP Silicon COLLECTOR 3 These transistors are designed for general purpose amplifier applications. They are housed in the SOT-323/SC-70 package which 1 is designed for low power surface mount applications. BASE Features 2 S Prefix for Automotive an

 0.2. Size:1411K  onsemi
 mmbt3904wt1g mmbt3906wt1g.pdf

MMBT3904WT1, NPN, SMMBT3904WT1, NPN, MMBT3906WT1, PNP General Purpose Transistors http //onsemi.com NPN and PNP Silicon COLLECTOR These transistors are designed for general purpose amplifier 3 applications. They are housed in the SOT-323/SC-70 package which is designed for low power surface mount applications. 1 BASE Features AEC-Q101 Qualified and PPAP Capable 2 S Pref

 5.1. Size:444K  secos
 mmbt3906w.pdf

MMBT3906W PNP Silicon Elektronische Bauelemente General Purpose Transistor RoHS Compliant Product FEATURES A suffix of "-C" specifies halogen & lead-free SOT-323(SC-70) Epitaxial Planar Die Construction Dim Min Max Complementary NPN Type Available (MMBT3904W) A 1.800 2.200 Ideal for Medium Power Amplification and B 1.150 1.350 A Switching L C 0.800 1.000 "Lead free is availab

 5.2. Size:102K  zovie
 mmbt3906wgh.pdf

Zowie Technology Corporation General Purpose Transistor PNP Silicon Lead free product Halogen-free type COLLECTOR 3 3 BASE 1 1 MMBT3906WGH 2 2 SOT-323 EMITTER MAXIMUM RATINGS Rating Symbol Value Unit Collector-Emitter Voltage VCEO -40 Vdc Collector-Base Voltage VCBO -40 Vdc Emitter-Base Voltage VEBO -5.0 Vdc Collector Current-Continuous IC -200 mAdc THERMAL CHARACTERISTICS

 5.3. Size:97K  zovie
 mmbt3906wg.pdf

Zowie Technology Corporation General Purpose Transistor PNP Silicon COLLECTOR 3 3 BASE 1 1 MMBT3906WG 2 2 SOT-323 EMITTER MAXIMUM RATINGS Rating Symbol Value Unit Collector-Emitter Voltage VCEO -40 Vdc Collector-Base Voltage VCBO -40 Vdc Emitter-Base Voltage VEBO -5.0 Vdc Collector Current-Continuous IC -200 mAdc THERMAL CHARACTERISTICS Characteristic Symbol Max. Unit o T

 5.4. Size:345K  wietron
 mmbt3906w.pdf

MMBT3906W COLLECTOR 3 General Purpose Transistor 3 PNP Silicon 1 BASE 1 2 2 EMITTER SOT-323(SC-70) M aximum R atings Rating Symbol Value Unit Collector-Emitter Voltage V -40 Vdc CEO Collector-Base Voltage VCBO -40 Vdc Emitter-Base VOltage VEBO -5.0 Vdc Collector Current-Continuous IC mAdc -200 Thermal Characteristics Characteristics Symbol Max Unit Total Device Dissipati

 5.5. Size:802K  kexin
 mmbt3906w.pdf

SMD Type Transistors PNP Transistors MMBT3906W Features Collector Current Capability IC=-0.2A Collector Emitter Voltage VCEO=-40V Complementary to MMBT3904W 1 Base 2 Emitter 3 Source Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO -40 Collector - Emitter Voltage VCEO -40 V Emitter - Base Voltage VEBO -5 Col

 5.6. Size:6807K  cn twgmc
 mmbt3906w.pdf

MMBT3906W MMBT3906W MMBT3906W MMBT3906W MMBT39 0 6W TRANSISTOR(PNP) for switching and amplifier applications SOT 323 3 1. BASE 1 2. EMITTER 2 3. COLLECTOR MAXIMUM RATINGS (TA=25 unless otherwise noted) Parameter Symbol Value Unit Collector Base Voltage -VCBO 40 V Collector Emitter Voltage -VCEO 40 V Emitter Base Voltage -VEBO 5 V Collector Current -IC 200 mA Total Po

 5.7. Size:427K  cn doeshare
 mmbt3906w.pdf

MMBT3906W MMBT3906W SOT-323 Silicon General Purpose Transistor (PNP) General description SOT-323 Silicon General Purpose Transistor (PNP) FEATURES Simplifies Circuit Design RoHS Compliant Green EMC Matte Tin(Sn) Lead Finish Weight approx. 0.001g Absolute Maximum Ratings (TA = 25 C unless otherwise noted) Parameter Symbol Value Unit Collector Base

 5.8. Size:196K  cn cbi
 mmbt3906w.pdf

MMBT3906W PNP Silicon Epitaxial Planar Transistor for switching and amplifier applications Marking Code 3N O Absolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value Unit Collector Base Voltage -VCBO 40 V Collector Emitter Voltage -VCEO 40 V Emitter Base Voltage -VEBO 5 V Collector Current -IC 200 mA Total Power Dissipation Ptot 200 mW O Junction Temperature Tj 150 C O