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2N6059 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2N6059

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 150 W

Tensión colector-base (Vcb): 100 V

Tensión colector-emisor (Vce): 100 V

Tensión emisor-base (Veb): 10 V

Corriente del colector DC máxima (Ic): 12 A

Temperatura operativa máxima (Tj): 200 °C

CARACTERÍSTICAS ELÉCTRICAS

Producto de corriente -- ganancia — ancho de banda (ft): 4 MHz

Capacitancia de salida (Cc): 300 pF

Ganancia de corriente contínua (hfe): 750

Empaquetado / Estuche: TO3

Búsqueda de reemplazo de transistor bipolar 2N6059

 

2N6059 Datasheet (PDF)

1.1. 2n6050 2n6051 2n6052 2n6057 2n6058 2n6059.pdf Size:275K _motorola

2N6059
2N6059

Order this document MOTOROLA by 2N6050/D SEMICONDUCTOR TECHNICAL DATA PNP 2N6050 Darlington Complementary thru Silicon Power Transistors . . . designed for generalpurpose amplifier and low frequency switching applications. 2N6052* High DC Current Gain NPN hFE = 3500 (Typ) @ IC = 5.0 Adc CollectorEmitter Sustaining Voltage @ 100 mA 2N6057 VCEO(sus) = 60 Vdc (Min) 2N6050,

1.2. 2n6059.pdf Size:42K _st

2N6059
2N6059

2N6059 SILICON NPN POWER DARLINGTON TRANSISTOR STMicrolectronics PREFERRED SALESTYPE HIGH GAIN NPN DARLINGTON HIGH CURRENT HIGH DISSIPATION INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE 1 2 APPLICATIONS LINEAR AND SWITCHING INDUSTRIAL EQUIPMENT TO-3 DESCRIPTION The 2N6059 is a silicon Epitaxial-Base NPN transistor in monolithic Darlington configuration mounted i

 1.3. 2n6050-2n6051-2n6052-2n6057-2n6058-2n6059.pdf Size:217K _comset

2N6059
2N6059

POWER COMPLEMENTARY POWER COMPLEMENTARY SILICON TRANSISTORS SILICON TRANSISTORS The 2N6050, 2N6051 and 2N6052 are silicon epitaxial-base PNP transistors in monolithic Darlington configuration mounted in Jedec TO-3 metal case. They are inteded for use in power linear and low frequency switching applications. The complementary NPN types are 2N6057, 2N6058 and 2N6059 respectively. ABS

1.4. 2n6050 2n6051 2n6052 2n6057 2n6058 2n6059.pdf Size:195K _bocasemi

2N6059
2N6059

A Boca Semiconductor Corp. BSC A Boca Semiconductor Corp. BSC http://www.bocasemi.com A Boca Semiconductor Corp. BSC http://www.bocasemi.com A Boca Semiconductor Corp. BSC http://www.bocasemi.com

 1.5. 2n6058 2n6059.pdf Size:109K _jmnic

2N6059
2N6059

Product Specification www.jmnic.com Silicon NPN Power Transistors 2N6058/2N6059 DESCRIPTION ·With TO-3 package ·High gain ·High current ·High dissipation ·Complement to type 2N5883/2N5884 APPLICATIONS ·They are intended for use in power linear and low frequency switching applications PINNING PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (T

1.6. 2n6058 2n6059.pdf Size:131K _inchange_semiconductor

2N6059
2N6059

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N6058 2N6059 DESCRIPTION ·With TO-3 package ·High current ;high dissipation ·DARLINGTON ·Complement to type 2N5883;2N5884 APPLICATIONS ·They are intended for use in power linear and low frequency switching applications PINNING PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-3)

1.7. 2n6059.pdf Size:175K _inchange_semiconductor

2N6059
2N6059

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlingtion Power Transistor 2N6059 DESCRIPTION ·Built-in Base-Emitter Shunt Resistors ·High DC current gain- hFE = 750 (Min) @ IC = 6A ·Collector-Emitter Sustaining Voltage- VCEO(SUS)= 100V(Min) ·Complement to type 2N6052 APPLICATIONS ·Designed for general purpose amplifier and low frequency switching app

Otros transistores... 2N6051 , 2N6052 , 2N6053 , 2N6054 , 2N6055 , 2N6056 , 2N6057 , 2N6058 , B772 , 2N606 , 2N6060 , 2N6061 , 2N6062 , 2N6063 , 2N6064 , 2N6065 , 2N6066 .

 
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