HBC848 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Spec. No. : HE6843 HI-SINCERITY Issued Date : 1994.07.29 Revised Date : 2008.01.30 MICROELECTRONICS CORP. Page No. : 1/4 HBC848 NPN EPITAXIAL PLANAR TRANSISTOR Description The HBC848 is designed for switching and AF amplifier amplification suitable for automatic insertion in thick and thin-film circuits. SOT-23 Absolute Maximum Ratings Maximum Temperatures Storag

Spec. No. : HE6827HI-SINCERITYIssued Date : 1993.11.28Revised Date : 2004.09.01MICROELECTRONICS CORP.Page No. : 1/4HBC847NPN EPITAXIAL PLANAR TRANSISTORDescriptionThe HBC847 is designed for switching and AF amplifier amplification suitable forautomatic insertion in thick and thin-film circuits.SOT-23Absolute Maximum Ratings Maximum TemperaturesStorage Temperature.

Spec. No. : C202S6R Issued Date : 2010.03.22 CYStech Electronics Corp.Revised Date : 2011.02.22 Page No. : 1/6 General Purpose NPN Epitaxial Planar Transistors (dual transistors) HBC8471S6R Features Two BTC2412 chips in a SOT-363R package. Mounting possible with SOT-323 automatic mounting machines. Transistor elements are independent, eliminating interference.

Spec. No. : C202S6R Issued Date : 2010.03.22 CYStech Electronics Corp.Revised Date : 2011.02.22 Page No. : 1/6 General Purpose NPN Epitaxial Planar Transistors (dual transistors) HBC8472S6R Features Two BTC2412 chips in a SOT-363R package. Mounting possible with SOT-323 automatic mounting machines. Transistor elements are independent, eliminating interference.