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HE8050S . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: HE8050S
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 0.625 W
   Tensión colector-base (Vcb): 25 V
   Tensión colector-emisor (Vce): 20 V
   Tensión emisor-base (Veb): 5 V
   Corriente del colector DC máxima (Ic): 0.7 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 150 MHz
   Capacitancia de salida (Cc): 10 pF
   Ganancia de corriente contínua (hfe): 100
   Paquete / Cubierta: TO-92

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HE8050S Datasheet (PDF)

 ..1. Size:54K  hsmc
he8050s.pdf

HE8050S
HE8050S

Spec. No. : HE6110HI-SINCERITYIssued Date : 1992.09.30Revised Date : 2004.07.26MICROELECTRONICS CORP.Page No. : 1/5HE8050SNPN EPITAXIAL PLANAR TRANSISTORDescriptionThe HE8050S is designed for general purpose amplifier applications.TO-92Absolute Maximum Ratings Maximum TemperaturesStorage Temperature ...................................................................

 8.1. Size:19K  utc
he8050l.pdf

HE8050S
HE8050S

UTC HE8050 NPN EPITAXIAL SILICON TRANSISTORLOW VOLTAGE HIGH CURRENTSMALL SIGNAL NPN TRANSISTORDESCRIPTION The UTC HE8050 is a low voltage high current smallsignal NPN transistor, designed for Class B push-pull 2Waudio amplifier for portable radio and general purposeapplications.1FEATURES*Collector current up to 1.5A*Collector-Emitter voltage up to 25 V*Complimentary to U

 8.2. Size:215K  utc
he8050.pdf

HE8050S
HE8050S

UNISONIC TECHNOLOGIES CO., LTD HE8050 NPN SILICON TRANSISTOR LOW VOLTAGE HIGH CURRENT SMALL SIGNAL NPN TRANSISTOR DESCRIPTION The UTC HE8050 is a low voltage high current small signal NPN transistor, designed for Class B push-pull 2W audio amplifier for portable radio and general purpose applications. FEATURES *Collector current up to 1.5A *Collector-Emitter voltag

 8.3. Size:46K  hsmc
he8050.pdf

HE8050S
HE8050S

Spec. No. : HE6112HI-SINCERITYIssued Date : 1992.09.30Revised Date : 2004.11.29MICROELECTRONICS CORP.Page No. : 1/4HE8050NPN EPITAXIAL PLANAR TRANSISTORDescriptionThe HE8050 is designed for use in 2W output amplifier of portable radios in class Bpush-pull operation.TO-92Features High total power dissipation (PT: 2W, TC=25C) High collector current (IC: 1.5A)

Otros transistores... 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , D882P , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .

 

 
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