HSD1609 Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: HSD1609
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 1.25 W
Tensión colector-base (Vcb): 160 V
Tensión colector-emisor (Vce): 160 V
Tensión emisor-base (Veb): 5 V
Corriente del colector DC máxima (Ic): 0.1 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 145 MHz
Capacitancia de salida (Cc): 3.8 pF
Ganancia de corriente contínua (hfe): 60
Paquete / Cubierta: TO-126ML
Búsqueda de reemplazo de HSD1609
HSD1609 datasheet
hsd1609.pdf
Spec. No. HE6606 HI-SINCERITY Issued Date 1993.03.15 Revised Date 2005.08.18 MICROELECTRONICS CORP. Page No. 1/4 HSD1609 NPN EPITAXIAL PLANAR TRANSISTOR Features Low frequency high voltage amplifier Complementary pair with HSB1109 TO-126ML Absolute Maximum Ratings (TA=25 C) Maximum Temperatures Storage Temperature ..............................................
hsd1609s.pdf
Spec. No. HE6515 HI-SINCERITY Issued Date 1993.03.15 Revised Date 2005.02.15 MICROELECTRONICS CORP. Page No. 1/5 HSD1609S NPN EPITAXIAL PLANAR TRANSISTOR Description The HSD1609S is designed for low frequency high voltage amplifier applications, complementary pair with HSB1109S. TO-92 Absolute Maximum Ratings Maximum Temperatures Storage Temperature ...................
hsd1616a.pdf
Spec. No. HE6534 HI-SINCERITY Issued Date 1998.06.01 Revised Date 2003.05.03 MICROELECTRONICS CORP. Page No. 1/5 HSD1616A NPN EPITAXIAL PLANAR TRANSISTOR Description The HSD1616A is designed for audio frequency power amplifier and medium speed switching applications. TO-92 Absolute Maximum Ratings Maximum Temperatures Storage Temperature ...............................
Otros transistores... HSB649T , HSB772 , HSB772S , HSB857 , HSB857D , HSB857J , HSC1815 , HSC945 , 2SA1837 , HSD1609S , HSD1616A , HSD313 , HSD468 , HSD667A , HSD669A , HSD669AT , HSD879 .
History: HMPSA42
History: HMPSA42
Liste
Recientemente añadidas las descripciónes de los transistores:
BJT: GA1A4M | SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550
Popular searches
2n5551 | irf540n | irf3205 mosfet | 2n3055 | irfp260n | 2n2222 datasheet | irf9540 | 2n3055 datasheet



