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HTIP127 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: HTIP127
   Material: Si
   Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 65 W
   Tensión colector-base (Vcb): 100 V
   Tensión colector-emisor (Vce): 100 V
   Tensión emisor-base (Veb): 5 V
   Corriente del colector DC máxima (Ic): 5 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Capacitancia de salida (Cc): 300 pF
   Ganancia de corriente contínua (hfe): 1000
   Paquete / Cubierta: TO-220AB

 Búsqueda de reemplazo de transistor bipolar HTIP127

 

HTIP127 Datasheet (PDF)

 ..1. Size:50K  hsmc
htip127.pdf

HTIP127 HTIP127

Spec. No. : HE6713HI-SINCERITYIssued Date : 1993.01.13Revised Date : 2004.11.19MICROELECTRONICS CORP.Page No. : 1/5HTIP127PNP EPITAXIAL PLANAR TRANSISTORDescriptionTO-220The HTIP127 is designed for use in general purpose amplifier and low-speedswitching applications. Darlington SchematicCAbsolute Maximum Ratings (TA=25C)B Maximum TemperaturesStorage Temper

 8.1. Size:48K  hsmc
htip122.pdf

HTIP127 HTIP127

Spec. No. : HE6712HI-SINCERITYIssued Date : 1993.01.13Revised Date : 2004.11.19MICROELECTRONICS CORP.Page No. : 1/5HTIP122NPN EPITAXIAL PLANAR TRANSISTORDescriptionTO-220The HTIP122 is designed for use in general purpose amplifier and low-speedswitching applications. Darlington SchematicCAbsolute Maximum Ratings (TA=25C)B Maximum TemperaturesStorage Temper

 9.1. Size:43K  hsmc
htip117.pdf

HTIP127 HTIP127

Spec. No. : HE200204HI-SINCERITYIssued Date : 2000.08.01Revised Date : 2004.11.19MICROELECTRONICS CORP.Page No. : 1/4HTIP117PNP EPITAXIAL PLANAR TRANSISTORDescriptionTO-220The HTIP117 is designed for use in general purpose amplifier and low-speedswitching applications. Darlington SchematicCAbsolute Maximum Ratings (TA=25C)B Maximum TemperaturesStorage Temp

 9.2. Size:52K  hsmc
htip112.pdf

HTIP127 HTIP127

Spec. No. : HE200203HI-SINCERITYIssued Date : 2000.08.01Revised Date : 2004.11.19MICROELECTRONICS CORP.Page No. : 1/5HTIP112NPN EPITAXIAL PLANAR TRANSISTORDescriptionTO-220The HTIP112 is designed for use in general purpose amplifier and low-speedswitching applications. Darlington SchematicCAbsolute Maximum Ratings (TA=25C)B Maximum TemperaturesStorage Temp

Otros transistores... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

 

 
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