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2N609 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: 2N609
   Material: Ge
   Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 0.18 W
   Tensión colector-base (Vcb): 25 V
   Tensión colector-emisor (Vce): 15 V
   Tensión emisor-base (Veb): 10 V
   Corriente del colector DC máxima (Ic): 0.2 A
   Temperatura operativa máxima (Tj): 100 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 1.8 MHz
   Capacitancia de salida (Cc): 15 pF
   Ganancia de corriente contínua (hfe): 90
   Paquete / Cubierta: TO5

 Búsqueda de reemplazo de transistor bipolar 2N609

 

2N609 Datasheet (PDF)

 0.1. Size:24K  advanced-semi
2n6093.pdf

2N609

2N6093NPN SILICON RF POWER TRANSISTORPACKAGE STYLE TO-217DESCRIPTION:The 2N6093 is a High Gain Linear RFPower Amplifier Used in Class A orClass B Applications With IndividualBallast Emitter Resistor and Built inTemperature Sensing Diode.MAXIMUM RATINGSIC 10 AVCE 35 VPDISS 83.3 W @ TC = 75 OC1 = Emitter & Diode Cathode TJ -65 OC to +200 OC2 = Collector3 = BaseTS

 0.2. Size:106K  jmnic
2n6098 2n6099 2n6100 2n6101.pdf

2N609
2N609

Product Specification www.jmnic.com Silicon NPN Power Transistors 2N6098 2N6099 2N6100 2N6101 DESCRIPTION With TO-220 package APPLICATIONS For use in general-purpose amplifier and switching applications PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base 3 Emitter Absolute maximum ratings(Ta=25) SYMBOL PARAMETER CONDITIONS VALUE UNIT2N

 0.3. Size:119K  inchange semiconductor
2n6098 2n6099 2n6100 2n6101.pdf

2N609
2N609

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N6098 2N6099 2N6100 2N6101 DESCRIPTION With TO-220 package High current capability APPLICATIONS For use in general-purpose amplifier and switching applications PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base 3 Emitter Absolute maximum ratings(Ta=25) SYMBOL PA

 0.4. Size:188K  inchange semiconductor
2n6098.pdf

2N609
2N609

isc Silicon NPN Power Transistor 2N6098DESCRIPTIONDC Current Gain -: h = 20-80@ I = 4AFE CCollector-Emitter Sustaining Voltage-: V = 60V(Min)CEO(SUS)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in general-purpose amplifier andswitching applications.ABSOLUTE MAXIMUM RATINGS

Otros transistores... 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , 2SA1837 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .

 

 
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