2N6090
. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2N6090
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.3
W
Tensión colector-base (Vcb): 45
V
Tensión colector-emisor (Vce): 45
V
Tensión emisor-base (Veb): 6
V
Corriente del colector DC máxima (Ic): 0.03
A
Temperatura operativa máxima (Tj): 175
°C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 60
MHz
Capacitancia de salida (Cc): 3
pF
Ganancia de corriente contínua (hfe): 150
Paquete / Cubierta:
TO77
Búsqueda de reemplazo de transistor bipolar 2N6090
2N6090
Datasheet (PDF)
9.2. Size:24K advanced-semi
2n6093.pdf
2N6093NPN SILICON RF POWER TRANSISTORPACKAGE STYLE TO-217DESCRIPTION:The 2N6093 is a High Gain Linear RFPower Amplifier Used in Class A orClass B Applications With IndividualBallast Emitter Resistor and Built inTemperature Sensing Diode.MAXIMUM RATINGSIC 10 AVCE 35 VPDISS 83.3 W @ TC = 75 OC1 = Emitter & Diode Cathode TJ -65 OC to +200 OC2 = Collector3 = BaseTS
9.3. Size:106K jmnic
2n6098 2n6099 2n6100 2n6101.pdf
Product Specification www.jmnic.com Silicon NPN Power Transistors 2N6098 2N6099 2N6100 2N6101 DESCRIPTION With TO-220 package APPLICATIONS For use in general-purpose amplifier and switching applications PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base 3 Emitter Absolute maximum ratings(Ta=25) SYMBOL PARAMETER CONDITIONS VALUE UNIT2N
9.4. Size:119K inchange semiconductor
2n6098 2n6099 2n6100 2n6101.pdf
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N6098 2N6099 2N6100 2N6101 DESCRIPTION With TO-220 package High current capability APPLICATIONS For use in general-purpose amplifier and switching applications PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base 3 Emitter Absolute maximum ratings(Ta=25) SYMBOL PA
9.5. Size:188K inchange semiconductor
2n6098.pdf
isc Silicon NPN Power Transistor 2N6098DESCRIPTIONDC Current Gain -: h = 20-80@ I = 4AFE CCollector-Emitter Sustaining Voltage-: V = 60V(Min)CEO(SUS)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in general-purpose amplifier andswitching applications.ABSOLUTE MAXIMUM RATINGS
Otros transistores... 2N6083
, 2N6084
, 2N6085
, 2N6086
, 2N6087
, 2N6088
, 2N6089
, 2N609
, 2SD2012
, 2N6091
, 2N6092
, 2N6093
, 2N6094
, 2N6095
, 2N6096
, 2N6097
, 2N6098
.