2N6093
. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2N6093
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 83
W
Tensión colector-base (Vcb): 70
V
Tensión colector-emisor (Vce): 35
V
Tensión emisor-base (Veb): 3
V
Corriente del colector DC máxima (Ic): 30
A
Temperatura operativa máxima (Tj): 200
°C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 100
MHz
Capacitancia de salida (Cc): 250
pF
Ganancia de corriente contínua (hfe): 20
Paquete / Cubierta: MT67
Búsqueda de reemplazo de transistor bipolar 2N6093
2N6093
Datasheet (PDF)
..1. Size:24K advanced-semi
2n6093.pdf
2N6093NPN SILICON RF POWER TRANSISTORPACKAGE STYLE TO-217DESCRIPTION:The 2N6093 is a High Gain Linear RFPower Amplifier Used in Class A orClass B Applications With IndividualBallast Emitter Resistor and Built inTemperature Sensing Diode.MAXIMUM RATINGSIC 10 AVCE 35 VPDISS 83.3 W @ TC = 75 OC1 = Emitter & Diode Cathode TJ -65 OC to +200 OC2 = Collector3 = BaseTS
9.2. Size:106K jmnic
2n6098 2n6099 2n6100 2n6101.pdf
Product Specification www.jmnic.com Silicon NPN Power Transistors 2N6098 2N6099 2N6100 2N6101 DESCRIPTION With TO-220 package APPLICATIONS For use in general-purpose amplifier and switching applications PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base 3 Emitter Absolute maximum ratings(Ta=25) SYMBOL PARAMETER CONDITIONS VALUE UNIT2N
9.3. Size:119K inchange semiconductor
2n6098 2n6099 2n6100 2n6101.pdf
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N6098 2N6099 2N6100 2N6101 DESCRIPTION With TO-220 package High current capability APPLICATIONS For use in general-purpose amplifier and switching applications PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base 3 Emitter Absolute maximum ratings(Ta=25) SYMBOL PA
9.4. Size:188K inchange semiconductor
2n6098.pdf
isc Silicon NPN Power Transistor 2N6098DESCRIPTIONDC Current Gain -: h = 20-80@ I = 4AFE CCollector-Emitter Sustaining Voltage-: V = 60V(Min)CEO(SUS)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in general-purpose amplifier andswitching applications.ABSOLUTE MAXIMUM RATINGS
Otros transistores... 2N3200
, 2N3201
, 2N3202
, 2N3203
, 2N3204
, 2N3205
, 2N3206
, 2N3207
, B772
, 2N3209
, 2N3209AQF
, 2N3209CSM
, 2N3209DCSM
, 2N3209L
, 2N321
, 2N3210
, 2N3211
.