2N6098 Todos los transistores

 ..1. Size:106K  jmnic
 2n6098 2n6099 2n6100 2n6101.pdf

Product Specification www.jmnic.com Silicon NPN Power Transistors 2N6098 2N6099 2N6100 2N6101 DESCRIPTION With TO-220 package APPLICATIONS For use in general-purpose amplifier and switching applications PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base 3 Emitter Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT 2N

 ..2. Size:119K  inchange semiconductor
 2n6098 2n6099 2n6100 2n6101.pdf

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N6098 2N6099 2N6100 2N6101 DESCRIPTION With TO-220 package High current capability APPLICATIONS For use in general-purpose amplifier and switching applications PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base 3 Emitter Absolute maximum ratings(Ta=25 ) SYMBOL PA

 ..3. Size:188K  inchange semiconductor
 2n6098.pdf

isc Silicon NPN Power Transistor 2N6098 DESCRIPTION DC Current Gain - h = 20-80@ I = 4A FE C Collector-Emitter Sustaining Voltage- V = 60V(Min) CEO(SUS) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in general-purpose amplifier and switching applications. ABSOLUTE MAXIMUM RATINGS

 9.1. Size:429K  1
 2n6094 2n6095 2n6096 2n6097.pdf

 9.2. Size:24K  advanced-semi
 2n6093.pdf

2N6093 NPN SILICON RF POWER TRANSISTOR PACKAGE STYLE TO-217 DESCRIPTION The 2N6093 is a High Gain Linear RF Power Amplifier Used in Class A or Class B Applications With Individual Ballast Emitter Resistor and Built in Temperature Sensing Diode. MAXIMUM RATINGS IC 10 A VCE 35 V PDISS 83.3 W @ TC = 75 OC 1 = Emitter & Diode Cathode TJ -65 OC to +200 OC 2 = Collector 3 = Base TS