2N6099 Todos los transistores


2N6099 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2N6099

Material: Si

Polaridad de transistor: NPN


Disipación total del dispositivo (Pc): 75 W

Tensión colector-base (Vcb): 70 V

Tensión colector-emisor (Vce): 60 V

Tensión emisor-base (Veb): 8 V

Corriente del colector DC máxima (Ic): 10 A

Temperatura operativa máxima (Tj): 150 °C


Producto de corriente -- ganancia — ancho de banda (ft): 0.8 MHz

Ganancia de corriente contínua (hfe): 20

Empaquetado / Estuche: TO220

Búsqueda de reemplazo de transistor bipolar 2N6099


2N6099 Datasheet (PDF)

1.1. 2n6098 2n6099 2n6100 2n6101.pdf Size:106K _jmnic


Product Specification www.jmnic.com Silicon NPN Power Transistors 2N6098 2N6099 2N6100 2N6101 DESCRIPTION · ·With TO-220 package APPLICATIONS ·For use in general-purpose amplifier and switching applications PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base 3 Emitter Absolute maximum ratings(Ta=25?) SYMBOL PARAMETER CONDITIONS VALUE UNIT 2N6098

1.2. 2n6098 2n6099 2n6100 2n6101.pdf Size:119K _inchange_semiconductor


Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N6098 2N6099 2N6100 2N6101 DESCRIPTION Ў¤ With TO-220 package Ў¤ High current capability APPLICATIONS Ў¤ For use in general-purpose amplifier and switching applications PINNING PIN 1 2 3 DESCRIPTION Base Collector;connected to mounting base Emitter Absolute maximum ratings(Ta=25Ўж ) SYMBOL PARAMETE

 5.1. 2n6093.pdf Size:24K _advanced-semi


2N6093 NPN SILICON RF POWER TRANSISTOR PACKAGE STYLE TO-217 DESCRIPTION: The 2N6093 is a High Gain Linear RF Power Amplifier Used in Class A or Class B Applications With Individual Ballast Emitter Resistor and Built in Temperature Sensing Diode. MAXIMUM RATINGS IC 10 A VCE 35 V PDISS 83.3 W @ TC = 75 OC 1 = Emitter & Diode Cathode TJ -65 OC to +200 OC 2 = Collector 3 = Base TSTG

5.2. 2n6098.pdf Size:188K _inchange_semiconductor


isc Silicon NPN Power Transistor 2N6098 DESCRIPTION ·DC Current Gain - : h = 20-80@ I = 4A FE C ·Collector-Emitter Sustaining Voltage- : V = 60V(Min) CEO(SUS) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in general-purpose amplifier and switching applications. ABSOLUTE MAXIMUM RATINGS

Otros transistores... 2N6091 , 2N6092 , 2N6093 , 2N6094 , 2N6095 , 2N6096 , 2N6097 , 2N6098 , 2N4403 , 2N60A , 2N60B , 2N60C , 2N61 , 2N610 , 2N6100 , 2N6101 , 2N6102 .


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