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2N60A . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2N60A

Material: Ge

Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.15 W

Tensión colector-base (Vcb): 40 V

Tensión emisor-base (Veb): 10 V

Corriente del colector DC máxima (Ic): 0.2 A

Temperatura operativa máxima (Tj): 85 °C

CARACTERÍSTICAS ELÉCTRICAS

Producto de corriente -- ganancia — ancho de banda (ft): 0.6 MHz

Capacitancia de salida (Cc): 80 pF

Ganancia de corriente contínua (hfe): 70

Empaquetado / Estuche: TO5

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2N60A Datasheet (PDF)

1.1. tmp2n60az tmpf2n60az.pdf Size:609K _update

2N60A
2N60A

TMP2N60AZ(G)/TMPF2N60AZ(G) Features N-channel MOSFET  Low gate charge BVDSS ID RDS(on)  100% avalanche tested 600V 2.0A < 4.0W  Improved dv/dt capability  RoHS compliant  Halogen free package  JEDEC Qualification  Improved ESD performance Device Package Marking Remark TMP2N60AZ / TMPF2N60AZ TO-220 / TO-220F TMP2N60AZ / TMPF2N60AZ RoHS TMP2N60AZG

1.2. tmp12n60a tmpf12n60a.pdf Size:604K _update

2N60A
2N60A

TMP12N60A(G)/TMPF12N60A(G) N-channel MOSFET Features BVDSS ID RDS(on)  Low gate charge 600V 12A < 0.65W  100% avalanche tested  Improved dv/dt capability  RoHS compliant  Halogen free package  JEDEC Qualification D G S Device Package Marking Remark TMP12N60A / TMPF12N60A TO-220 / TO-220F TMP12N60A / TMPF12N60A RoHS TMP12N60AG / TMPF12N60AG TO-22

 1.3. tmu2n60az.pdf Size:455K _update

2N60A
2N60A

TMD2N60AZ(G)/TMU2N60AZ(G) N-channel MOSFET Features  Low gate charge BVDSS ID RDS(on)  100% avalanche tested 600V 2.0A < 4.0W  Improved dv/dt capability  RoHS compliant  Halogen free package  JEDEC Qualification  Improved ESD performance D-PAK I-PAK Device Package Marking Remark TMD2N60AZ / TMU2N60AZ D-PAK/I-PAK TMD2N60AZ / TMU2N60AZ RoHS TMD2N

1.4. tmd2n60az.pdf Size:455K _upd-mosfet

2N60A
2N60A

TMD2N60AZ(G)/TMU2N60AZ(G) N-channel MOSFET Features  Low gate charge BVDSS ID RDS(on)  100% avalanche tested 600V 2.0A < 4.0W  Improved dv/dt capability  RoHS compliant  Halogen free package  JEDEC Qualification  Improved ESD performance D-PAK I-PAK Device Package Marking Remark TMD2N60AZ / TMU2N60AZ D-PAK/I-PAK TMD2N60AZ / TMU2N60AZ RoHS TMD2N

 1.5. cs12n60a8hd.pdf Size:356K _update_mosfet

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2N60A

Silicon N-Channel Power MOSFET R ○ CS12N60 A8HD VDSS 600 V XGeneral Description: ID 12 A CS12N60 A8HD, the silicon N-channel Enhanced PD (TC=25℃) 140 W VDMOSFETs, is obtained by the self-aligned planar RDS(ON)Typ 0.5 Ω Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various

1.6. cs12n60a8h.pdf Size:352K _update_mosfet

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2N60A

Silicon N-Channel Power MOSFET R ○ CS12N60 A8H VDSS 600 V General Description: ID 12 A CS12N60 A8H, the silicon N-channel Enhanced PD (TC=25℃) 140 W VDMOSFETs, is obtained by the self-aligned planar RDS(ON)Typ 0.5 Ω Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various po

1.7. hgtg12n60a4d hgtp12n60a4d hgt1s12n60a4d.pdf Size:173K _fairchild_semi

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2N60A

HGTG12N60A4D, HGTP12N60A4D, HGT1S12N60A4DS Data Sheet December 2001 600V, SMPS Series N-Channel IGBT with Features Anti-Parallel Hyperfast Diode >100kHz Operation . . . . . . . . . . . . . . . . . . . . . 390V, 12A The HGTG12N60A4D, HGTP12N60A4D and 200kHz Operation . . . . . . . . . . . . . . . . . . . . . . . 390V, 9A HGT1S12N60A4DS are MOS gated high voltage switching 600V Swit

1.8. hgtg12n60a4 hgtp12n60a4 hgt1s12n60a4.pdf Size:207K _fairchild_semi

2N60A
2N60A

HGTP12N60A4, HGTG12N60A4, HGT1S12N60A4S9A Data Sheet August 2003 600V, SMPS Series N-Channel IGBTs Features The HGTP12N60A4, HGTG12N60A4 and >100kHz Operation at 390V, 12A HGT1S12N60A4S9A are MOS gated high voltage switching 200kHz Operation at 390V, 9A devices combining the best features of MOSFETs and 600V Switching SOA Capability bipolar transistors. These devices have the hi

1.9. ssp2n60a.pdf Size:939K _samsung

2N60A
2N60A

Advanced Power MOSFET FEATURES BVDSS = 600 V Avalanche Rugged Technology RDS(on) = 5.0 ? Rugged Gate Oxide Technology Lower Input Capacitance ID = 2 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 A (Max.) @ VDS = 600V Lower RDS(ON) : 3.892 ? (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic Value Units

1.10. ssw2n60a.pdf Size:509K _samsung

2N60A
2N60A

Advanced Power MOSFET FEATURES BVDSS = 600 V Avalanche Rugged Technology RDS(on) = 5.0 ? Rugged Gate Oxide Technology Lower Input Capacitance ID = 2 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 A (Max.) @ VDS = 600V 2 Lower RDS(ON) : 3.892 ? (Typ.) 1 1 2 3 3 1. Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristi

1.11. sss2n60a.pdf Size:507K _samsung

2N60A
2N60A

Advanced Power MOSFET FEATURES BVDSS = 600 V Avalanche Rugged Technology RDS(on) = 5 ? Rugged Gate Oxide Technology Lower Input Capacitance ID = 1.3 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 A (Max.) @ VDS = 600V Lower RDS(ON) : 3.892 ? (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic Value Units

1.12. ssr2n60a.pdf Size:505K _samsung

2N60A
2N60A

Advanced Power MOSFET FEATURES BVDSS = 600 V Avalanche Rugged Technology RDS(on) = 5 ? Rugged Gate Oxide Technology Lower Input Capacitance ID = 1.8 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 A (Max.) @ VDS = 600V Lower RDS(ON) : 3.892 ? (Typ.) 2 1 1 2 3 3 1. Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic

1.13. ixgk72n60a3h1 ixgx72n60a3h1.pdf Size:229K _ixys

2N60A
2N60A

Advance Technical Information GenX3TM 600V IGBT VCES = 600V IXGK72N60A3H1 w/Diode IC110 = 72A IXGX72N60A3H1 ? VCE(sat) ? ?? 1.35V ? ? tfi(typ) = 250ns Ultra-Low Vsat PT IGBTs for up to 5kHz Switching TO-264 (IXGK) Symbol Test Conditions Maximum Ratings VCES TJ = 25C to 150C 600 V VCGR TJ = 25C to 150C, RGE = 1M? 600 V (TAB) G VGES Continuous 20 V C E VGEM Transient 30

1.14. ixgn72n60a3.pdf Size:182K _igbt

2N60A
2N60A

Preliminary Technical Information VCES = 600V IXGN72N60A3 GenX3TM 600V IGBT IC110 = 68A ≤ VCE(sat) ≤ ≤ 1.35V ≤ ≤ Ultra Low Vsat PT IGBT for up to 5kHz switching E SOT-227B, miniBLOC Symbol Test Conditions Maximum Ratings E153432 VCES TJ = 25°C to 150°C 600 V E VCGR TJ = 25°C to 150°C, RGE = 1MΩ 600 V G VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC

1.15. ixgk72n60a3h1.pdf Size:227K _igbt

2N60A
2N60A

Advance Technical Information GenX3TM 600V IGBT VCES = 600V IXGK72N60A3H1 w/Diode IC110 = 72A IXGX72N60A3H1 ≤ VCE(sat) ≤ ≤£ 1.35V ≤ ≤ tfi(typ) = 250ns Ultra-Low Vsat PT IGBTs for up to 5kHz Switching TO-264 (IXGK) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ 600 V (TAB) G VGES Continuous ±20 V C E

1.16. ixgh32n60a.pdf Size:125K _igbt

2N60A
2N60A

IXGH 32N60B HiPerFASTTM IGBT VCES = 600 V IXGT 32N60B IC25 = 60 A IXGH 32N60BD1 VCE(sat) = 2.3 V IXGT 32N60BD1 tfi(typ) = 85 ns (D1) Symbol Test Conditions Maximum Ratings TO-268 (IXGT) G VCES TJ = 25°C to 150°C 600 V E C VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V (TAB) VGES Continuous ±20 V TO-247 AD VGEM Transient ±30 V (IXGH) IC25 TC = 25°C60 A IC90 TC = 90°C3

1.17. ixgh72n60a3.pdf Size:198K _igbt

2N60A
2N60A

IXGH72N60A3 VCES = 600V GenX3TM 600V IGBT IXGT72N60A3 IC110 = 72A Ultra Low Vsat PT IGBT for ≤ VCE(sat) ≤ ≤ 1.35V ≤ ≤ up to 5kHz switching tfi(typ) = 250ns TO-247 (IXGH) Symbol Test Conditions Maximum Ratings VCES TC = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ 600 V VGES Continuous ± 20 V VGEM Transient ± 30 V G C C (TAB) E IC25 TC = 25°C (lim

1.18. ixgt72n60a3.pdf Size:198K _igbt_a

2N60A
2N60A

IXGH72N60A3 VCES = 600V GenX3TM 600V IGBT IXGT72N60A3 IC110 = 72A Ultra Low Vsat PT IGBT for ≤ VCE(sat) ≤ ≤ 1.35V ≤ ≤ up to 5kHz switching tfi(typ) = 250ns TO-247 (IXGH) Symbol Test Conditions Maximum Ratings VCES TC = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ 600 V VGES Continuous ± 20 V VGEM Transient ± 30 V G C C (TAB) E IC25 TC = 25°C (lim

1.19. ixgx72n60a3h1.pdf Size:227K _igbt_a

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Advance Technical Information GenX3TM 600V IGBT VCES = 600V IXGK72N60A3H1 w/Diode IC110 = 72A IXGX72N60A3H1 ≤ VCE(sat) ≤ ≤£ 1.35V ≤ ≤ tfi(typ) = 250ns Ultra-Low Vsat PT IGBTs for up to 5kHz Switching TO-264 (IXGK) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ 600 V (TAB) G VGES Continuous ±20 V C E

1.20. ixgr72n60a3.pdf Size:183K _igbt_a

2N60A
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VCES = 600V GenX3TM 600V IGBT IXGR72N60A3 IC110 = 52A ≤ VCE(sat) ≤ ≤ 1.35V ≤ ≤ Ultra-low Vsat PT IGBTs for up to 5kHz switching tfi(typ) = 250ns Symbol Test Conditions Maximum Ratings ISOPLUS247TM (IXGR) VCES TJ = 25°C to 150°C 600 V E153432 VCGR TJ = 25°C to 150°C, RGE = 1MΩ 600 V VGES Continuous ± 20 V VGEM Transient ± 30 V IC110 TC = 110°C 52 A G ICM TC

1.21. ixsn52n60au1.pdf Size:150K _igbt_a

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IGBT with Diode IXSN 52N60AU1 VCES = 600 V IC25 = 80 A Combi Pack VCE(sat) = 3 V 3 Short Circuit SOA Capability 2 4 1 Symbol Test Conditions Maximum Ratings miniBLOC, SOT-227 B 1 VCES TJ = 25°C to 150°C 600 V 2 VCGR TJ = 25°C to 150°C; RGE = 1 MW 600 A VGES Continuous ±20 V VGEM Transient ±30 V 4 IC25 TC = 25°C80 A 3 IC90 TC = 90°C40 A 1 = Emitter , 3 = Collector IC

1.22. ixgr72n60a3h1.pdf Size:219K _igbt_a

2N60A
2N60A

Advance Technical Information GenX3TM 600V IGBT VCES = 600V IXGR72N60A3H1 w/Diode IC110 = 52A ≤ VCE(sat) ≤ ≤£ 1.35V ≤ ≤ (Electrically Isolated Back Surface) tfi(typ) = 250ns Ultra-Low Vsat PT IGBT for up to 5kHz Switching Symbol Test Conditions Maximum Ratings ISOPLUS 247TM VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ 600 V VGES Continuous ±

1.23. aod2n60a.pdf Size:428K _aosemi

2N60A
2N60A

AOD2N60A/AOI2N60A/AOU2N60A 600V,2A N-Channel MOSFET General Description Product Summary VDS @ Tj,max 700V • Advanced High Voltage MOSFET technology • Low RDS(ON) ID (at VGS=10V) 2A • Low Ciss and Crss RDS(ON) (at VGS=10V) < 4.7Ω • High Current Capability • RoHS and Halogen Free Compliant Applications 100% UIS Tested 100% Rg Tested • General Lighting for LED and CCF

1.24. aoi2n60a.pdf Size:428K _aosemi

2N60A
2N60A

AOD2N60A/AOI2N60A/AOU2N60A 600V,2A N-Channel MOSFET General Description Product Summary VDS @ Tj,max 700V • Advanced High Voltage MOSFET technology • Low RDS(ON) ID (at VGS=10V) 2A • Low Ciss and Crss RDS(ON) (at VGS=10V) < 4.7Ω • High Current Capability • RoHS and Halogen Free Compliant Applications 100% UIS Tested 100% Rg Tested • General Lighting for LED and CCF

1.25. aou2n60a.pdf Size:428K _aosemi

2N60A
2N60A

AOD2N60A/AOI2N60A/AOU2N60A 600V,2A N-Channel MOSFET General Description Product Summary VDS @ Tj,max 700V • Advanced High Voltage MOSFET technology • Low RDS(ON) ID (at VGS=10V) 2A • Low Ciss and Crss RDS(ON) (at VGS=10V) < 4.7Ω • High Current Capability • RoHS and Halogen Free Compliant Applications 100% UIS Tested 100% Rg Tested • General Lighting for LED and CCF

1.26. cm12n60af.pdf Size:126K _jdsemi

2N60A
2N60A

R CM12N60AF 深圳市晶导电子有限公司 www.jdsemi.cn ShenZhen Jingdao Electronic Co.,Ltd. POWER MOSFET ◆600V N-Channel VDMOS ◆使用及贮存时需防静电 ◆符合 RoHS 等环保指令要求 1.主要用途 主要用于充电器、LD驱动、电源适配器 E 等各类功率开关电路 2.主要特点 开关速度快 1 通态电阻小,输入电容小

1.27. cm12n60a to220a.pdf Size:123K _jdsemi

2N60A
2N60A

R CM12N60A 深圳市晶导电子有限公司 www.jdsemi.cn ShenZhen Jingdao Electronic Co.,Ltd. POWER MOSFET ◆600V N-Channel VDMOS ◆使用及贮存时需防静电 ◆符合 RoHS 等环保指令要求 1.主要用途 主要用于充电器、LD驱动、电源适配器 E 等各类功率开关电路 2.主要特点 开关速度快 通态电阻小,输入电容小 3

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