CMBT2907A Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: CMBT2907A

Material: Si

Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.25 W

Tensión colector-base (Vcb): 60 V

Tensión colector-emisor (Vce): 60 V

Tensión emisor-base (Veb): 5 V

Corriente del colector DC máxima (Ic): 0.6 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 200 MHz

Capacitancia de salida (Cc): 8 pF

Ganancia de corriente contínua (hFE): 50

Encapsulados: SOT-23

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CMBT2907A datasheet

 6.1. Size:79K  rectron
cmbt2907.pdf pdf_icon

CMBT2907A

CMBT2907 PNP Silicon Planar Epitaxial Transistors Pin configuration 1. BASE 2. EMITTER 3. COLLECTOR 3 1 2 Unit mm SOT-23 SMD Package Absolute Maximum Ratings (Ta = 25 oC unless specified otherwise) SYMBOL CMBT2907 CMBT2907A UNITS DESCRIPTION -VCEO Collector Emitter Voltage 40 60 Collector Base Voltage -VCBO 60 60 V -VEBO Emitter Base Voltage 5.0 5.0 -IC 600 mA Collector

 6.2. Size:151K  cdil
cmbt2907 a.pdf pdf_icon

CMBT2907A

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package CMBT2907 CMBT2907A SILICON PLANAR EPITAXIAL TRANSISTORS P N P silicon transistors Marking PACKAGE OUTLINE DETAILS CMBT2907 = 2B ALL DIMENSIONS IN mm CMBT2907A = 2F Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR 3 1 2 ABSOLUTE MAXIMUM RATINGS CMBT2907 C

 9.1. Size:75K  rectron
cmbt2222a.pdf pdf_icon

CMBT2907A

CMBT2222A NPN Silicon Planar Epitaxial Transistors Pin configuration 1. BASE 2. EMITTER 3. COLLECTOR 3 1 2 Unit inch (mm) Absolute Maximum Ratings Symbol Value UNIT Collector-base voltage (open emitter) VCBO max 75 V Collector-emmitter voltage (open base) VCEO max 40 V Emmitter base voltage (open collector) VEBO max 6.0 V IC Collector current (d.c.) max 600 mA Total

 9.2. Size:135K  cdil
cmbt200.pdf pdf_icon

CMBT2907A

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company PNP EPITAXIAL PLANAR SILICON TRANSISTOR CMBT200 CMBT200A PIN CONFIGURATION (PNP) 1 = BASE SOT23 2 = EMITTER 3 = COLLECTOR 3 MARKING AS BELOW 1 2 Designed for General Purpose Amplifier Applications. ABSOLUTE MAXIMUM RATINGS(Ta=25deg C unless otherwise noted) DESCRIPTION SYMBOL VALUE UNIT

Otros transistores... CIL928A, CIL928AO, CIL928AY, CIT8050D, CLF100, CMBT2222, CMBT2222A, CMBT2907, BC556, CMBT3903, CMBT3904, CMBT3905, CMBT3906, CSC1507, CSC1507FG, CSC1507G, CSC1507O