CMBT2907A . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: CMBT2907A
   Material: Si
   Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS

   Disipación total del dispositivo (Pc): 0.25 W
   Tensión colector-base (Vcb): 60 V
   Tensión colector-emisor (Vce): 60 V
   Tensión emisor-base (Veb): 5 V
   Corriente del colector DC máxima (Ic): 0.6 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   Transición de frecuencia (ft): 200 MHz
   Capacitancia de salida (Cc): 8 pF
   Ganancia de corriente contínua (hfe): 50
   Paquete / Cubierta: SOT-23

Búsqueda de reemplazo de transistor bipolar CMBT2907A

CMBT2907A Datasheet (PDF)

6.1. Size:79K rectron
cmbt2907.pdf

CMBT2907 PNP Silicon Planar Epitaxial Transistors Pin configuration:1. BASE2. EMITTER3. COLLECTOR312Unit: mmSOT-23 SMD PackageAbsolute Maximum Ratings (Ta = 25 oC unless specified otherwise) SYMBOL CMBT2907 CMBT2907A UNITSDESCRIPTION-VCEOCollector Emitter Voltage 40 60Collector Base Voltage -VCBO 60 60 V-VEBOEmitter Base Voltage 5.0 5.0-IC 600 mACollector

6.2. Size:151K cdil
cmbt2907 a.pdf

Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanySOT-23 Formed SMD Package CMBT2907CMBT2907ASILICON PLANAR EPITAXIAL TRANSISTORSPNP silicon transistorsMarkingPACKAGE OUTLINE DETAILSCMBT2907 = 2B ALL DIMENSIONS IN mmCMBT2907A = 2FPin configuration1 = BASE2 = EMITTER3 = COLLECTOR312ABSOLUTE MAXIMUM RATINGSCMBT2907 C

9.1. Size:75K rectron
cmbt2222a.pdf

CMBT2222ANPN Silicon Planar Epitaxial Transistors Pin configuration:1. BASE2. EMITTER3. COLLECTOR312Unit: inch (mm)Absolute Maximum RatingsSymbol Value UNITCollector-base voltage (open emitter)VCBOmax 75 VCollector-emmitter voltage (open base)VCEO max 40 VEmmitter base voltage (open collector)VEBO max 6.0 VICCollector current (d.c.) max 600 mATotal

9.2. Size:135K cdil
cmbt200.pdf

Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyPNP EPITAXIAL PLANAR SILICON TRANSISTOR CMBT200CMBT200APIN CONFIGURATION (PNP)1 = BASESOT232 = EMITTER3 = COLLECTOR3MARKING : AS BELOW12Designed for General Purpose Amplifier Applications.ABSOLUTE MAXIMUM RATINGS(Ta=25deg C unless otherwise noted)DESCRIPTION SYMBOL VALUE UNIT

9.3. Size:291K cdil
cmbt2222 a.pdf

Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanySOT-23 Formed SMD Package CMBT2222CMBT2222ASILICON PLANAR EPITAXIAL TRANSISTORSNPN silicon transistorsMarkingPACKAGE OUTLINE DETAILSCMBT2222 = lB ALL DIMENSIONS IN mmCMBT2222A = lPPin configuration1 = BASE2 = EMITTER3 = COLLECTOR312ABSOLUTE MAXIMUM RATINGSCMBT2222 C

9.4. Size:215K cdil
cmbt2369.pdf

Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanySOT-23 Formed SMD Package CMBT2369SILICON PLANAR EPITAXIAL SWITCHING TRANSISTORNP N transistorMarkingPACKAGE OUTLINE DETAILSCMBT2369 = lJALL DIMENSIONS IN mmPin configuration1 = BASE2 = EMITTER3 = COLLECTOR312ABSOLUTE MAXIMUM RATINGSCollectorbase voltage (open emitter

9.5. Size:130K cdil
cmbt2484.pdf

Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyNPN SILICON EPITAXIAL TRANSISTOR CMBT2484SOT23PIN CONFIGURATION (NPN)1 = BASE2 = EMITTER3 = COLLECTOR3MARKING: 1U12LOW NOISE TRANSISTORABSOLUTE MAXIMUM RATINGS (Ta=25 deg C)DESCRIPTION SYMBOL VALUE UNITCollector -Base Voltage VCBO 60 VCollector -Emitter Voltage VCEO 60 VEmi

Otros transistores... 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , D209L , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .

History: MMUN2132LT2 | NA41UH

Liste

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