CD13003 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: CD13003
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 45 W
Tensión colector-base (Vcb): 600 V
Tensión colector-emisor (Vce): 400 V
Tensión emisor-base (Veb): 9 V
Corriente del colector DC máxima (Ic): 1.5 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 4 MHz
Capacitancia de salida (Cc): 21 pF
Ganancia de corriente contínua (hfe): 4
Paquete / Cubierta: TO-126
Búsqueda de reemplazo de transistor bipolar CD13003
CD13003 Datasheet (PDF)
cd13003.pdf
Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyNPN SILICON POWER TRANSISTOR CD13003TO126 Plastic PackageApplicationsSuitable for Lighting, Switching Regulator and Motor ControlABSOLUTE MAXIMUM RATINGSDESCRIPTION SYMBOL VALUE UNITVCBOCollector Base Voltage 600 VVCEOCollector Emitter (sus) Voltage 400 VEmitter Base Voltage VEBO 9
cd13003d.pdf
Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyNPN SILICON POWER TRANSISTOR CD13003DTO126 Plastic PackageWith Built - in Integrated Diode between Emitter & CollectorABSOLUTE MAXIMUM RATINGSDESCRIPTION SYMBOL VALUE UNITCollector Base Voltage VCBO 600 VCollector Emitter (sus) Voltage VCEO 400 VEmitter Base Voltage VEBO 9.0 VCollector
fcd1300n80z.pdf
August 2014FCD1300N80ZN-Channel SuperFET II MOSFET800 V, 4 A, 1.3 Features Description RDS(on) = 1.05 Typ.) SuperFET II MOSFET is Fairchild Semiconductors brand-new high voltage super-junction (SJ) MOSFET family that is utilizing Ultra Low Gate Charge (Typ. Qg = 16.2 nC)charge balance technology for outstanding low on-resistance Low Eoss (Typ. 1.5
cd13005.pdf
Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyNPN SILICON POWER TRANSISTOR CD13005TO-220Plastic PackageApplicationsSuitable for Lighting, Switching Regulator and Motor ControlABSOLUTE MAXIMUM RATINGSDESCRIPTION SYMBOL VALUE UNITVCBOCollector -Base Voltage 600 VVCEOCollector -Emitter (sus) Voltage 400 VEmitter Base Voltage VEBO
cd13001.pdf
Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyNPN SILICON PLANAR EPITAXIAL TRANSISTOR CD13001 TO - 92Plastic PackageABSOLUTE MAXIMUM RATING (Ta =25C )DESCRIPTION SYMBOL VALUE UNITVCBOCollector Base Voltage 500 VVCEOCollector Emitter Voltage 400 VVEBOEmitter Base Voltage 9.0 VICCollector Current Continuous 0.5 AICMPeak
cd13002 tcd13002.pdf
Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyNPN SILICON PLANAR EPITAXIAL, HIGH VOLTAGE CD13002 FAST SWITCHING POWER TRANSISTOR TCD13002 (Tin Lead Part)LEAD FREETO-92Plastic PackageBCECompact Fluorescent Lamps (CFLS)ABSOLUTE MAXIMUM RATING (Ta =25C )DESCRIPTION SYMBOL VALUE UNITCollector Base Voltage VCBO 600 VCollector E
Otros transistores... 2SA1801 , 2SA1802 , 2SA1802A , 2SA1803 , 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , BD777 , 2SA1805 , 2SA1805O , 2SA1805R , 2SA1806 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C .
Liste
Recientemente añadidas las descripciónes de los transistores:
BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050