CMBT4403 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: CMBT4403
   Material: Si
   Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS

   Disipación total del dispositivo (Pc): 0.25 W
   Tensión colector-base (Vcb): 40 V
   Tensión colector-emisor (Vce): 40 V
   Tensión emisor-base (Veb): 5 V
   Corriente del colector DC máxima (Ic): 0.6 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   Transición de frecuencia (ft): 200 MHz
   Capacitancia de salida (Cc): 8.5 pF
   Ganancia de corriente contínua (hfe): 20
   Paquete / Cubierta: SOT-23

Búsqueda de reemplazo de transistor bipolar CMBT4403

CMBT4403 Datasheet (PDF)

..1. Size:191K cdil
cmbt4403.pdf

Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanySOT-23 Formed SMD PackageCMBT4403SILICON PLANAR EPITAXIAL TRANSISTORPNP transistorMarkingCMBT4403 = 2TPin configuration1 = BASE2 = EMITTER3 = COLLECTOR312ABSOLUTE MAXIMUM RATINGSCollectoremitter voltage VCEO max. 40 VCollector current (DC) I max. 600 mACD

7.1. Size:168K cdil
cmbt4401.pdf

Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanySOT-23 Formed SMD PackageCMBT4401SILICON PLANAR EPITAXIAL TRANSISTORNPN transistorMarkingPACKAGE OUTLINE DETAILSCMBT4401 = 2XALL DIMENSIONS IN mmPin configuration1 = BASE2 = EMITTER3 = COLLECTOR312ABSOLUTE MAXIMUM RATINGSCollectoremitter voltage VCEO max. 40 VC

9.1. Size:145K cdil
cmbt4126.pdf

Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanySOT-23 Formed SMD PackageCMBT4126GENERAL PURPOSE TRANSISTORPNP transistorMarkingCMBT4126 = 5EPin configuration1 = BASE2 = EMITTER3 = COLLECTOR312ABSOLUTE MAXIMUM RATINGSCollectorbase voltage (open emitter) VCBO max. 25 VCollectoremitter voltage (open base)

9.2. Size:148K cdil
cmbt4125.pdf

Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanySOT-23 Formed SMD PackageCMBT4125GENERAL PURPOSE TRANSISTORPNP transistorMarkingCMBT4125 = 5DPin configuration1 = BASE2 = EMITTER3 = COLLECTOR312ABSOLUTE MAXIMUM RATINGSCollectorbase voltage (open emitter) VCBO max. 30 VCollectoremitter voltage (open base)

9.3. Size:145K cdil
cmbt4124.pdf

Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanySOT-23 Formed SMD PackageCMBT4124GENERAL PURPOSE TRANSISTORNPN transistorMarkingCMBT4124 = 5CPin configuration1 = BASE2 = EMITTER3 = COLLECTOR312ABSOLUTE MAXIMUM RATINGSCollectorbase voltage (open emitter) VCBO max. 30 VCollectoremitter voltage (open base)

9.4. Size:148K cdil
cmbt4123.pdf

Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanySOT-23 Formed SMD PackageCMBT4123GENERAL PURPOSE TRANSISTORNPN transistorMarkingCMBT4123 = 5BPin configuration1 = BASE2 = EMITTER3 = COLLECTOR312ABSOLUTE MAXIMUM RATINGSCollectorbase voltage (open emitter) VCBO max. 40 VCollectoremitter voltage (open base)

Otros transistores... 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , 2SA1837 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .

History: DTL3407

Liste

Recientemente añadidas las descripciónes de los transistores:

BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050