2N6109 Todos los transistores

 

2N6109 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2N6109

Material: Si

Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 40 W

Tensión colector-base (Vcb): 60 V

Tensión colector-emisor (Vce): 50 V

Tensión emisor-base (Veb): 5 V

Corriente del colector DC máxima (Ic): 7 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Producto de corriente -- ganancia — ancho de banda (ft): 0.5 MHz

Ganancia de corriente contínua (hfe): 30

Empaquetado / Estuche: TO220

Búsqueda de reemplazo de transistor bipolar 2N6109

 

 

2N6109 Datasheet (PDF)

1.1. 2n6109g.pdf Size:102K _upd

2N6109
2N6109

2N6107, 2N6109, 2N6111 (PNP), 2N6288, 2N6292 (NPN) Complementary Silicon Plastic Power Transistors These devices are designed for use in general-purpose amplifier and switching applications. www.onsemi.com Features 7 AMPERE • High DC Current Gain • High Current Gain - Bandwidth Product POWER TRANSISTORS • TO-220 Compact Package COMPLEMENTARY SILICON • These Devices are Pb-

1.2. 2n6109g 2n6107g.pdf Size:102K _upd

2N6109
2N6109

2N6107, 2N6109, 2N6111 (PNP), 2N6288, 2N6292 (NPN) Complementary Silicon Plastic Power Transistors These devices are designed for use in general-purpose amplifier and switching applications. www.onsemi.com Features 7 AMPERE • High DC Current Gain • High Current Gain - Bandwidth Product POWER TRANSISTORS • TO-220 Compact Package COMPLEMENTARY SILICON • These Devices are Pb-

 1.3. 2n6107 2n6111 2n6288 2n6109 2n6292.pdf Size:149K _motorola

2N6109
2N6109

Order this document MOTOROLA by 2N6107/D SEMICONDUCTOR TECHNICAL DATA 2N6057 thru 2N6059 (See 2N6050) Complementary Silicon Plastic PNP Power Transistors 2N6107 . . . designed for use in generalpurpose amplifier and switching applications. 2N6109* DC Current Gain Specified to 7.0 Amperes hFE = 30150 @ IC = 3.0 Adc 2N6111, 2N6288 hFE = 2.3 (Min) @ IC = 7.0 Adc All Devices 2N61

1.4. 2n6107 2n6109 2n6111 2n6288 2n6290 2n6292.pdf Size:70K _central

2N6109

145 Adams Avenue, Hauppauge, NY 11788 USA Tel: (631) 435-1110 Fax: (631) 435-1824

 1.5. 2n6107 2n6109 2n6111 2n6288 2n6292.pdf Size:90K _onsemi

2N6109
2N6109

PNP - 2N6107, 2N6109, 2N6111; NPN - 2N6288, 2N6292 2N6109 and 2N6292 are Preferred Devices Complementary Silicon Plastic Power Transistors http://onsemi.com These devices are designed for use in general-purpose amplifier and switching applications. 7 AMPERE Features POWER TRANSISTORS DC Current Gain Specified to 7.0 Amperes hFE = 30-150 @ IC COMPLEMENTARY SILICON = 3.0 Adc - 2N611

1.6. 2n6106 2n6107 2n6108 2n6109 2n6110 2n6111 2n6288 2n6289 2n6290 2n6291 2n6292 2n6293 2n6473 2n6474 2n6475 2n6476.pdf Size:101K _bocasemi

2N6109
2N6109

Boca Semiconductor Corp. BSC http://www.bocasemi.com http://www.bocasemi.com

1.7. 2n6109.pdf Size:249K _cdil

2N6109
2N6109

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company TO-220 Plastic Package 2N6109 2N6109 PNP PLASTIC POWER TRANSISTOR General Purpose Amplifier and Switching Application PIN CONFIGURATION 4 1. BASE 2. COLLECTOR 3. EMITTER 4. COLLECTOR 1 2 3 C DIM MIN. MAX. E B F A 14.42 16.51 B 9.63 10.67 C 3.56 4.83 D0.90 E 1.15 1.40 1 2 3 F 3.75 3.8

1.8. 2n6109.pdf Size:188K _inchange_semiconductor

2N6109
2N6109

INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor 2N6109 DESCRIPTION ·DC Current Gain: hFE = 30-150@ IC= -2.5A ·Collector-Emitter Sustaining Voltage: VCEO(SUS)= -50V(Min) APPLICATIONS ·Designed for use in general-purpose amplifier and switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL VCBO VCEO VEBO IC ICM IB PC TJ Tstg PARAMETER Collector

1.9. 2n6107 2n6109 2n6111.pdf Size:121K _inchange_semiconductor

2N6109
2N6109

Inchange Semiconductor Product Specification Silicon PNP Power Transistors DESCRIPTION Ў¤ With TO-220 package Ў¤ Complement to NPN type: 2N6288; 2N6290 ;2N6292 APPLICATIONS Ў¤ Power amplifier and switching circuits applications PINNING PIN 1 2 3 DESCRIPTION Emitter Collector;connected to mounting base Base 2N6107 2N6109 2N6111 Fig.1 simplified outline (TO-220) and symbol Abs

Otros transistores... 2N6101 , 2N6102 , 2N6103 , 2N6104 , 2N6105 , 2N6106 , 2N6107 , 2N6108 , BC337 , 2N611 , 2N6110 , 2N6111 , 2N6112 , 2N6116 , 2N612 , 2N6121 , 2N6122 .

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