2N6112
. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2N6112
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.36
W
Tensión colector-base (Vcb): 50
V
Tensión colector-emisor (Vce): 30
V
Tensión emisor-base (Veb): 5
V
Corriente del colector DC máxima (Ic): 0.05
A
Temperatura operativa máxima (Tj): 125
°C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 160
MHz
Capacitancia de salida (Cc): 10
pF
Ganancia de corriente contínua (hfe): 185
Paquete / Cubierta:
TO92
Búsqueda de reemplazo de transistor bipolar 2N6112
2N6112
Datasheet (PDF)
9.2. Size:149K motorola
2n6107 2n6111 2n6288 2n6109 2n6292.pdf
Order this documentMOTOROLAby 2N6107/DSEMICONDUCTOR TECHNICAL DATA2N6057 thru 2N6059(See 2N6050)Complementary Silicon PlasticPNPPower Transistors 2N6107. . . designed for use in generalpurpose amplifier and switching applications.2N6109* DC Current Gain Specified to 7.0 AmpereshFE = 30150 @ IC = 3.0 Adc 2N6111, 2N6288hFE = 2.3 (Min) @ IC = 7.0 Adc All
9.3. Size:48K st
2n6107 2n6111.pdf
2N61072N6111SILICON PNP SWITCHING TRANSISTORS STMicroelectronics PREFERREDSALESTYPE PNP TRANSISTORS APPLICATIONS: LINEAR AND SWITCHING INDUSTRIALEQUIPMENT 321DESCRIPTION The 2N6107 and 2N6111 are epitaxial-base PNPTO-220silicon transistors in Jedec TO-220 plasticpackage. They are intended for a wide variety ofmedium power switching and linear applications
9.4. Size:56K st
2n6111.pdf
2N6111SILICON PNP SWITCHING TRANSISTOR STMicroelectronics PREFERREDSALESTYPE PNP TRANSISTORAPPLICATIONS: LINEAR AND SWITCHING INDUSTRIALEQUIPMENT DESCRIPTION 32The 2N6111 is an Epitaxial-Base PNP silicon1transistor in Jedec TO-220 plastic package. It isintended for a wide variety of medium powerTO-220switching and linear applications.INTERNAL SCHEMATIC DIA
9.6. Size:241K onsemi
2n6107g 2n6109g 2n6111g 2n6288g 2n6292g.pdf
2N6107, 2N6109, 2N6111 (PNP),2N6288, 2N6292 (NPN)Complementary SiliconPlastic Power TransistorsThese devices are designed for use in general-purpose amplifier andswitching applications.www.onsemi.comFeatures7 AMPERE High DC Current Gain High Current Gain - Bandwidth ProductPOWER TRANSISTORS TO-220 Compact PackageCOMPLEMENTARY SILICON These Devices are Pb-
9.7. Size:241K onsemi
2n6107 2n6109 2n6111 2n6288 2n6292.pdf
2N6107, 2N6109, 2N6111 (PNP),2N6288, 2N6292 (NPN)Complementary SiliconPlastic Power TransistorsThese devices are designed for use in general-purpose amplifier andswitching applications.www.onsemi.comFeatures7 AMPERE High DC Current Gain High Current Gain - Bandwidth ProductPOWER TRANSISTORS TO-220 Compact PackageCOMPLEMENTARY SILICON These Devices are Pb-
9.8. Size:102K onsemi
2n6111g 2n6111g 2n6292g.pdf
2N6107, 2N6109, 2N6111 (PNP),2N6288, 2N6292 (NPN)Complementary SiliconPlastic Power TransistorsThese devices are designed for use in general-purpose amplifier andswitching applications.www.onsemi.comFeatures7 AMPERE High DC Current Gain High Current Gain - Bandwidth ProductPOWER TRANSISTORS TO-220 Compact PackageCOMPLEMENTARY SILICON These Devices are Pb-
9.10. Size:188K cdil
2n6111.pdf
Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyTO-220 Plastic Package 2N61112N6111 PNP PLASTIC POWER TRANSISTORGeneral Purpose Amplifier and Switching ApplicationsPIN CONFIGURATION41. BASE2. COLLECTOR3. EMITTER4. COLLECTOR123CDIM MIN. MAX.EBFA 14.42 16.51B 9.63 10.67C 3.56 4.83D0.90E 1.15 1.401 2 3F 3.75
9.11. Size:197K inchange semiconductor
2n6110.pdf
INCHANGE Semiconductorisc Silicon PNP Power Transistor 2N6110DESCRIPTIONDC Current Gain-: h = 30-150@ I = -3AFE CCollector-Emitter Sustaining Voltage-: V = -30V(Min)CEO(SUS)Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower amplifier and switchingcircuits applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSY
9.12. Size:121K inchange semiconductor
2n6106 2n6108 2n6110.pdf
Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2N6106 2N6108 2N6110 DESCRIPTION With TO-220 package With short pin APPLICATIONS Power amplifier and switching circuits applications PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base Fig.1 simplified outline (TO-220) and symbol3 BaseAbsolute maximum ratings(Ta=2
9.13. Size:196K inchange semiconductor
2n6111.pdf
INCHANGE Semiconductorisc Silicon PNP Power Transistor 2N6111DESCRIPTIONDC Current Gain-: h = 30-150@ I = -3AFE CCollector-Emitter Sustaining Voltage-: V = -30V(Min)CEO(SUS)Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in general-purpose amplifier andswitching applicationsABSOLUTE MAXIMUM RATINGS
9.14. Size:121K inchange semiconductor
2n6107 2n6109 2n6111.pdf
Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2N6107 2N6109 2N6111 DESCRIPTION With TO-220 package Complement to NPN type: 2N6288; 2N6290 ;2N6292 APPLICATIONS Power amplifier and switching circuits applications PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base Fig.1 simplified outline (TO-220) and symbol3 B
Otros transistores... 2N6105
, 2N6106
, 2N6107
, 2N6108
, 2N6109
, 2N611
, 2N6110
, 2N6111
, TSB145
, 2N6116
, 2N612
, 2N6121
, 2N6122
, 2N6123
, 2N6124
, 2N6125
, 2N6126
.