2N6121 Todos los transistores

 ..1. Size:83K  central
 2n6121 2n6122 2n6123 2n6124 2n6125 2n6126.pdf

TM Central Semiconductor Corp. 145 Adams Avenue Hauppauge, NY 11788 USA Tel (631) 435-1110 Fax (631) 435-1824 www.centralsemi.com

 ..2. Size:196K  inchange semiconductor
 2n6121.pdf

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2N6121 DESCRIPTION Collector-Emitter Sustaining Voltage- V = 0.6V(Max.)@ I = 1.5A CE(sat) C Collector-Emitter Sustaining Voltage- V = 45V(Min) CEO(SUS) Complement to Type 2N6124 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in power amplifier and

 ..3. Size:120K  inchange semiconductor
 2n6121 2n6122 2n6123.pdf

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N6121 2N6122 2N6123 DESCRIPTION With TO-220 package Complement to PNP type 2N6124 ;2N6125 ;2N6126 APPLICATIONS For use in power amplifier and switching circuit applications PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base 3 Emitter Absolute maximum ratings(Ta=

 0.1. Size:190K  mospec
 2n6121-26.pdf

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 0.2. Size:263K  cdil
 2n6121-26.pdf

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company TO-220 Plastic Package 2N6121, 2N6122, 2N6123 2N6124, 2N6125, 2N6126 2N6121, 6122, 6123 NPN PLASTIC POWER TRANSISTORS 2N6124, 6125, 6126 PNP PLASTIC POWER TRANSISTORS Medium Power Linear and Switching Applications PIN CONFIGURATION 4 1. BASE 2. COLLECTOR 3. EMITTER 4. COLLECTOR 1 2 3 C DI

 9.1. Size:104K  jmnic
 2n6129 2n6130 2n6131.pdf

Product Specification www.jmnic.com Silicon NPN Power Transistors 2N6129 2N6130 2N6131 DESCRIPTION With TO-220 package High power dissipation Complement to PNP type 2N6132 2N6133 2N6134 APPLICATIONS Power amplifier and medium speed switching applications PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base 3 Emitter Absolute maximum r

 9.2. Size:198K  inchange semiconductor
 2n6124.pdf

INCHANGE Semiconductor isc Silicon PNP Power Transistor 2N6124 DESCRIPTION Collector-Emitter Sustaining Voltage- V = -0.6V(Max.)@ I = -1.5A CE(sat) C Collector-Emitter Sustaining Voltage- V = -45V(Min) CEO(SUS) Complement to Type 2N6121 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in power amplifier a

 9.3. Size:196K  inchange semiconductor
 2n6122.pdf

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2N6122 DESCRIPTION Collector-Emitter Sustaining Voltage- V = 0.6V(Max.)@ I = 1.5A CE(sat) C Collector-Emitter Sustaining Voltage- V = 60V(Min) CEO(SUS) Complement to Type 2N6125 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in power amplifier and

 9.4. Size:198K  inchange semiconductor
 2n6126.pdf

INCHANGE Semiconductor isc Silicon PNP Power Transistor 2N6126 DESCRIPTION Collector-Emitter Sustaining Voltage- V = -0.6V(Max.)@ I = -1.5A CE(sat) C Collector-Emitter Sustaining Voltage- V = -80V(Min) CEO(SUS) Complement to Type 2N6123 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in power amplifier a

 9.5. Size:120K  inchange semiconductor
 2n6124 2n6125 2n6126.pdf

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2N6124 2N6125 2N6126 DESCRIPTION With TO-220 package Complement to PNP type 2N6121 ;2N6122 ;2N6123 APPLICATIONS For use in power amplifier and switching circuit applications PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base Fig.1 simplified outline (TO-220) and

 9.6. Size:120K  inchange semiconductor
 2n6129 2n6130 2n6131.pdf

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N6129 2N6130 2N6131 DESCRIPTION With TO-220 package High power dissipation Complement to PNP type 2N6132 2N6133 2N6134 APPLICATIONS Power amplifier and medium speed switching applications PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base 3 Emitter Absolute

 9.7. Size:194K  inchange semiconductor
 2n6129.pdf

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2N6129 DESCRIPTION DC Current Gain- h = 20-100@ I = 2.5A FE C Collector-Emitter Sustaining Voltage- V = 40V(Min) CEO(SUS) Complement to Type 2N6132 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in power amplifier and switching circuits applicatio

 9.8. Size:197K  inchange semiconductor
 2n6123.pdf

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2N6123 DESCRIPTION Collector-Emitter Sustaining Voltage- V = 0.6V(Max.)@ I = 1.5A CE(sat) C Collector-Emitter Sustaining Voltage- V = 80V(Min) CEO(SUS) Complement to Type 2N6126 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in power amplifier and

 9.9. Size:198K  inchange semiconductor
 2n6125.pdf

INCHANGE Semiconductor isc Silicon PNP Power Transistor 2N6125 DESCRIPTION Collector-Emitter Sustaining Voltage- V = -0.6V(Max.)@ I = -1.5A CE(sat) C Collector-Emitter Sustaining Voltage- V = -60V(Min) CEO(SUS) Complement to Type 2N6122 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in power amplifier a