CSA1316GR . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: CSA1316GR
Material: Si
Polaridad de transistor: PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.4 W
Tensión colector-emisor (Vce): 80 V
Corriente del colector DC máxima (Ic): 0.1 A
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 80 MHz
Ganancia de corriente contínua (hfe): 200
Paquete / Cubierta: TO-92
Búsqueda de reemplazo de transistor bipolar CSA1316GR
CSA1316GR Datasheet (PDF)
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Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyNPN SILICON PLANAR EPITAXIAL TRANSISTOR CSC3329TO-92Plastic PackageComplementary CSA1316ABSOLUTE MAXIMUM RATINGS (Ta=25C unless specified otherwise)DESCRIPTION SYMBOL VALUE UNITSVCEOCollector Emitter Voltage 80 VVCBOCollector Base Voltage 80 VVEBOEmitter Base Voltage 5 VICCol
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csa1362.pdf
Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanySOT-23 Formed SMD PackageCSA1362LOW FREQUENCY POWER AMPLIFIER TRANSISTORPNP transistorMarkingCSA1362GR = 62Pin configuration1 = BASE2 = EMITTER3 = COLLECTOR312ABSOLUTE MAXIMUM RATINGSCollectorbase voltage (open emitter) VCBO max. 15 VCollectoremitter voltage
Otros transistores... HA9079 , HA9500 , HA9501 , HA9502 , HA9531 , HA9531A , HA9532 , HA9532A , 2222A , HCT2907A , HCT2907M , HDA412 , HDA420 , HDA496 , HEP637 , HEPG0001 , HEPG0002 .
History: CS1508G | SGSF665 | PTB20110
History: CS1508G | SGSF665 | PTB20110
Liste
Recientemente añadidas las descripciónes de los transistores:
BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050