2N6131 Todos los transistores

 ..1. Size:104K  jmnic
 2n6129 2n6130 2n6131.pdf

Product Specification www.jmnic.com Silicon NPN Power Transistors 2N6129 2N6130 2N6131 DESCRIPTION With TO-220 package High power dissipation Complement to PNP type 2N6132 2N6133 2N6134 APPLICATIONS Power amplifier and medium speed switching applications PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base 3 Emitter Absolute maximum r

 ..2. Size:194K  inchange semiconductor
 2n6131.pdf

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2N6131 DESCRIPTION DC Current Gain- h = 20-100@ I = 2.5A FE C Collector-Emitter Sustaining Voltage- V = 80V(Min) CEO(SUS) Complement to Type 2N6134 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in power amplifier and switching circuits applicatio

 ..3. Size:120K  inchange semiconductor
 2n6129 2n6130 2n6131.pdf

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N6129 2N6130 2N6131 DESCRIPTION With TO-220 package High power dissipation Complement to PNP type 2N6132 2N6133 2N6134 APPLICATIONS Power amplifier and medium speed switching applications PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base 3 Emitter Absolute

 9.1. Size:104K  jmnic
 2n6132 2n6133 2n6134.pdf

Product Specification www.jmnic.com Silicon PNP Power Transistors 2N6132 2N6133 2N6134 DESCRIPTION With TO-220 package High power dissipation Complement to NPN type 2N6129 2N6130 2N6131 APPLICATIONS Power amplifier and medium speed switching applications PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base 3 Base Absolute maximum ra

 9.2. Size:137K  unitrode
 2n6137.pdf

 9.3. Size:194K  inchange semiconductor
 2n6130.pdf

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2N6130 DESCRIPTION DC Current Gain- h = 20-100@ I = 2.5A FE C Collector-Emitter Sustaining Voltage- V = 60V(Min) CEO(SUS) Complement to Type 2N6133 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in power amplifier and switching circuits applicatio

 9.4. Size:195K  inchange semiconductor
 2n6132.pdf

INCHANGE Semiconductor isc Silicon PNP Power Transistor 2N6132 DESCRIPTION DC Current Gain- h = 20-100@ I = -2.5A FE C Collector-Emitter Sustaining Voltage- V = -40V(Min) CEO(SUS) Complement to Type 2N6129 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in general-purpose amplifier and switching applica

 9.5. Size:119K  inchange semiconductor
 2n6132 2n6133 2n6134.pdf

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2N6132 2N6133 2N6134 DESCRIPTION With TO-220 package High power dissipation Complement to NPN type 2N6129 2N6130 2N6131 APPLICATIONS Power amplifier and medium speed switching applications PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base Fig.1 simplified o

 9.6. Size:195K  inchange semiconductor
 2n6133.pdf

INCHANGE Semiconductor isc Silicon PNP Power Transistor 2N6133 DESCRIPTION DC Current Gain- h = 20-100@ I = -2.5A FE C Collector-Emitter Sustaining Voltage- V = -60V(Min) CEO(SUS) Complement to Type 2N6130 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in general-purpose amplifier and switching applica

 9.7. Size:196K  inchange semiconductor
 2n6134.pdf

INCHANGE Semiconductor isc Silicon PNP Power Transistor 2N6134 DESCRIPTION DC Current Gain- h = 20-100@ I = -2.5A FE C Collector-Emitter Sustaining Voltage- V = -80V(Min) CEO(SUS) Complement to Type 2N6131 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in general-purpose amplifier and switching applica