2N6132
. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2N6132
Material: Si
Polaridad de transistor: PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 50
W
Tensión colector-base (Vcb): 40
V
Tensión colector-emisor (Vce): 40
V
Tensión emisor-base (Veb): 5
V
Corriente del colector DC máxima (Ic): 7
A
Temperatura operativa máxima (Tj): 150
°C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 2
MHz
Ganancia de corriente contínua (hfe): 20
Paquete / Cubierta:
TO220
Búsqueda de reemplazo de transistor bipolar 2N6132
2N6132
Datasheet (PDF)
..1. Size:104K jmnic
2n6132 2n6133 2n6134.pdf 
Product Specification www.jmnic.com Silicon PNP Power Transistors 2N6132 2N6133 2N6134 DESCRIPTION With TO-220 package High power dissipation Complement to NPN type : 2N6129 2N6130 2N6131 APPLICATIONS Power amplifier and medium speed switching applications PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base 3 BaseAbsolute maximum ra
..2. Size:195K inchange semiconductor
2n6132.pdf
INCHANGE Semiconductorisc Silicon PNP Power Transistor 2N6132DESCRIPTIONDC Current Gain-: h = 20-100@ I = -2.5AFE CCollector-Emitter Sustaining Voltage-: V = -40V(Min)CEO(SUS)Complement to Type 2N6129Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in general-purpose amplifier andswitching applica
..3. Size:119K inchange semiconductor
2n6132 2n6133 2n6134.pdf
Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2N6132 2N6133 2N6134 DESCRIPTION With TO-220 package High power dissipation Complement to NPN type : 2N6129 2N6130 2N6131 APPLICATIONS Power amplifier and medium speed switching applications PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base Fig.1 simplified o
9.1. Size:104K jmnic
2n6129 2n6130 2n6131.pdf
Product Specification www.jmnic.com Silicon NPN Power Transistors 2N6129 2N6130 2N6131 DESCRIPTION With TO-220 package High power dissipation Complement to PNP type : 2N6132 2N6133 2N6134 APPLICATIONS Power amplifier and medium speed switching applications PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base 3 Emitter Absolute maximum r
9.3. Size:194K inchange semiconductor
2n6130.pdf
INCHANGE Semiconductorisc Silicon NPN Power Transistor 2N6130DESCRIPTIONDC Current Gain-: h = 20-100@ I = 2.5AFE CCollector-Emitter Sustaining Voltage-: V = 60V(Min)CEO(SUS)Complement to Type 2N6133Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in power amplifier and switching circuitsapplicatio
9.4. Size:194K inchange semiconductor
2n6131.pdf
INCHANGE Semiconductorisc Silicon NPN Power Transistor 2N6131DESCRIPTIONDC Current Gain-: h = 20-100@ I = 2.5AFE CCollector-Emitter Sustaining Voltage-: V = 80V(Min)CEO(SUS)Complement to Type 2N6134Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in power amplifier and switching circuitsapplicatio
9.5. Size:120K inchange semiconductor
2n6129 2n6130 2n6131.pdf
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N6129 2N6130 2N6131 DESCRIPTION With TO-220 package High power dissipation Complement to PNP type : 2N6132 2N6133 2N6134 APPLICATIONS Power amplifier and medium speed switching applications PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base 3 Emitter Absolute
9.6. Size:195K inchange semiconductor
2n6133.pdf
INCHANGE Semiconductorisc Silicon PNP Power Transistor 2N6133DESCRIPTIONDC Current Gain-: h = 20-100@ I = -2.5AFE CCollector-Emitter Sustaining Voltage-: V = -60V(Min)CEO(SUS)Complement to Type 2N6130Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in general-purpose amplifier andswitching applica
9.7. Size:196K inchange semiconductor
2n6134.pdf
INCHANGE Semiconductorisc Silicon PNP Power Transistor 2N6134DESCRIPTIONDC Current Gain-: h = 20-100@ I = -2.5AFE CCollector-Emitter Sustaining Voltage-: V = -80V(Min)CEO(SUS)Complement to Type 2N6131Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in general-purpose amplifier andswitching applica
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